Chin. Phys. Lett.  2014, Vol. 31 Issue (05): 057307    DOI: 10.1088/0256-307X/31/5/057307
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
Role of Oxygen Vacancy Arrangement on the Formation of a Conductive Filament in a ZnO Thin Film
ZHAO Jing1,2,3, DONG Jing-Yu1,2, ZHAO Xu1,2, CHEN Wei1,2**
1College of Physics Science and Information Engineering, Hebei Normal University, Shijiazhuang 050024
2Key Laboratory of Advanced Films of Hebei Province, Shijiazhuang 050024
3Department of Physics and Electrical Engineering, Handan College, Handan 056005
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ZHAO Jing, DONG Jing-Yu, ZHAO Xu et al  2014 Chin. Phys. Lett. 31 057307
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Abstract We perform first-principles calculations for ZnO thin films with oxygen vacancy defects. The densities of states, partial atomic densities of states, charge density differences and atomic populations are presented. We show that the SET process, i.e., from a high resistive state to a low resistive state, is attributable to the aggregation and regular arrangement of the oxygen vacancies, which causes the formation of conductive filaments and leads to the low resistive state of the system.
Published: 24 April 2014
PACS:  73.22.-f (Electronic structure of nanoscale materials and related systems)  
  73.61.-r (Electrical properties of specific thin films)  
  71.55.-i (Impurity and defect levels)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/31/5/057307       OR      https://cpl.iphy.ac.cn/Y2014/V31/I05/057307
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ZHAO Jing
DONG Jing-Yu
ZHAO Xu
CHEN Wei
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