| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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A Wafer-Level Sn-Rich Au–Sn Bonding Technique and Its Application in Surface Plasmon Resonance Sensors |
| MAO Xu1,3, LV Xing-Dong1,3, WEI Wei-Wei1,3, ZHANG Zhe2,3, YANG Jin-Ling1,3**, QI Zhi-Mei2,3, YANG Fu-Hua1 |
1Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2Institute of Electronics, Chinese Academy of Sciences, Beijing 100190
3State Key Laboratory of Transducer Technology, Shanghai 200050
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| Cite this article: |
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MAO Xu, LV Xing-Dong, WEI Wei-Wei et al 2014 Chin. Phys. Lett. 31 056803 |
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Abstract Sn-rich Au–Sn solder bonding is systematically investigated. High shear strength (64 MPa) and good hermeticity (a leak rate lower than 1×10?7 torr?l/s) are obtained for Au–Sn solder with 54 wt% Sn bonded at 310°C. The AuSn2 phase with the highest Vickers-hardness among the four stable intermetallic compounds of the Au–Sn system makes a major contribution to the high bonding strength. This bonding technique has been successfully used to package the Surface Plasmon Resonance (SPR) sensors. The Sn-rich Au–Sn solder bonding provides a reliable, low-cost, low-temperature and wafer-level hermetic packaging solution for the micro-electromechanical system devices and has potential applications in high-end biomedical sensors.
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Published: 24 April 2014
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| PACS: |
62.20.-x
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(Mechanical properties of solids)
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42.25.Gy
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(Edge and boundary effects; reflection and refraction)
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61.82.Bg
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(Metals and alloys)
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