CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Temperature-Dependent Photoluminescence of Silicon Nanoporous Pillar Array |
LI Yong1,2, WANG Xiao-Bo1,3, FAN Zhi-Qiang1, LI Xin-Jian1** |
1Department of Physics and Laboratory of Material Physics, Zhengzhou University, Zhengzhou 450052 2Department of Physics and Solar Energy Research Center, Pingdingshan University, Pingdingshan 467000 3Department of Physics, Anyang Normal University, Anyang 455000
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Cite this article: |
LI Yong, WANG Xiao-Bo, FAN Zhi-Qiang et al 2014 Chin. Phys. Lett. 31 047801 |
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Abstract Silicon nanoporous pillar array (Si-NPA) is a micron-nanometer hierarchical structure which might be used as functional substrates for constructing optoelectronic nanodevices. This makes understanding the photoluminescence (PL) from Si-NPA important. We measure the PL of Si-NPA in the range of 11–300 K. By analyzing the evolution of the peak energy and intensity with temperature, the ultraviolet, blue, orange and red PL bands from Si-NPA are attributed to the radiative recombination through the deep-levels in silicon oxide, oxygen-related defect states in silicon nanocrystallites (nc-Si), band-to-band transition within nc-Si, and surface/interface states of nc-Si or between nc-Si and SiOx, respectively. At least two non-radiative recombination processes, which are activated at different temperature ranges, are proposed for the PL intensity variation with temperature. These results might provide strong foundations for designing and constructing optoelectronic devices based on silicon nanostructures.
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Received: 25 November 2013
Published: 25 March 2014
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PACS: |
78.67.Bf
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(Nanocrystals, nanoparticles, and nanoclusters)
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78.67.Rb
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(Nanoporous materials)
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61.46.Hk
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(Nanocrystals)
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62.23.Pq
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(Composites (nanosystems embedded in a larger structure))
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