| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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High Power 1060 nm Distributed Feedback Semiconductor Laser |
| ZHAI Teng**, TAN Shao-Yang, LU Dan, WANG Wei, ZHANG Rui-Kang, JI Chen |
Key Laboratory of Semiconductors Materials, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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| Cite this article: |
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ZHAI Teng, TAN Shao-Yang, LU Dan et al 2014 Chin. Phys. Lett. 31 024203 |
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Abstract A GaAs based high power distributed feedback (DFB) semiconductor laser with a second-order grating has been demonstrated. An output power of 150 mW at an injection current of 350 mA is realized with a 1-mm cavity length. With a new design of the waveguide structure, the DFB laser maintains a stable single longitudinal mode around 1060 nm with a side mode suppression ratio of larger than 50 dB.
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Received: 18 October 2013
Published: 28 February 2014
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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81.07.St
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(Quantum wells)
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42.40.Eq
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(Holographic optical elements; holographic gratings)
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42.60.Lh
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(Efficiency, stability, gain, and other operational parameters)
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