| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Observation of a Flat Band in Silicene |
| FENG Ya, FENG Bao-Jie, XIE Zhuo-Jin, LI Wen-Bin, LIU Xu, LIU De-Fa, ZHAO Lin, CHEN Lan, ZHOU Xing-Jiang**, WU Ke-Hui** |
Institute of Physics, Chinese Academy of Sciences, Beijing 100190
|
|
| Cite this article: |
|
FENG Ya, FENG Bao-Jie, XIE Zhuo-Jin et al 2014 Chin. Phys. Lett. 31 127303 |
|
|
|
|
Abstract The electronic structure of silicene on Ag(111) is studied by scanning tunneling microscopy and angle resolved photoemission spectroscopy. A flat band at 0.9 eV below the Fermi level is revealed. We find that the flat band is strongly suppressed near atomic defects, domain boundaries and step edges compared to that on the flat terraces. The discovery of the flat band and its sensitivity to local perturbations provides a new way to manipulate the electronic structure and properties of silicene.
|
|
|
Received: 21 October 2014
Published: 12 January 2015
|
|
| PACS: |
73.20.At
|
(Surface states, band structure, electron density of states)
|
| |
73.90.+f
|
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
|
|
|
|
|
|
[1] Tasaki H 1996 J. Stat. Phys. 84 535
[2] Tasaki H 1992 Phys. Rev. Lett. 69 1608
[3] Mielke A 1999 Phys. Rev. Lett. 82 4312
[4] Shen Z X and Dessau D S 1995 Phys. Rep. 253 1
[5] Yang H B, Wang S C, Sekharan, A K P, Matsui H and Souma S, Sato T, Takahashi T, Takeuchi T, Campuzano J C, Jin R, Sales B C, Mandrus D, Wang Z and Ding H 2004 Phys. Rev. Lett. 92 246403
[6] Mielke A 1991 J. Phys. A: Math. Gen. 24 L73
[7] Mielke A 1991 J. Phys. A: Math. Gen. 24 3311
[8] Mielke A 1991 J. Phys. A: Math. Gen. 24 4335
[9] Nita M, Ostahie B and Aldea A 2013 Phys. Rev. B 87 125428
[10] Leykam D, Flach S, Bahat Treidel O and Desyatnikov A S 2013 Phys. Rev. B 88 224203
[11] Sun K, Gu Z, Katsura H and Sarma S D 2011 Phys. Rev. Lett. 106 236803
[12] Tang E, Mei J W and Wen X G 2011 Phys. Rev. Lett. 106 236802
[13] Bergholtz E J and Liu Z 2013 Int. J. Mod. Phys. B 27 1330017
[14] Liu Z, Bergholtz E, Fan H and Lauchli A M 2012 Phys. Rev. Lett. 109 186805
[15] GuzmanVerri G G and Voon L C L Y 2007 Phys. Rev. B 76 075131
[16] Cahangirov S, Topsakal M, Aktürk E, SahinH and Ciraci S 2009 Phys. Rev. Lett. 102 236804
[17] Liu C C, Feng W and Yao Y 2011 Phys. Rev. Lett. 107 076802
[18] Ezawa M 2012 Phys. Rev. Lett. 109 055502
[19] Vogt P, De Padova P, Quaresima C, Avila J, Frantzeskakis E, Asensio M C, Resta A, Ealet B and Le Lay G 2012 Phys. Rev. Lett. 108 155501
[20] Feng B, Ding Z, Meng S, Yao Y, He X, Cheng P, Chen L and Wu K 2012 Nano Lett. 12 3507
[21] Meng L, Wang Y, Zhang L, Du S, Wu R, Li L, Zhang Y, Li G, Zhou H, Hofer W A and Gao H J 2013 Nano Lett. 13 685
[22] Fleurence A, Friedlein R, Ozaki T, Kawai H, Wang Y and YamadaTakamura Y 2012 Phys. Rev. Lett. 108 245501
[23] Chen L, Liu C C, Feng B, He X, Cheng P, Ding Z, Meng S, Yao Y and Wu K 2012 Phys. Rev. Lett. 109 056804
[24] Chen L, Liu C C, Feng B, He X, Cheng P, Ding Z, Meng S, Yao Y and Wu K 2013 Phys. Rev. Lett. 110 229702
[25] Feng B, Li H, Liu C C, Shao T N, Cheng P, Yao Y, Meng S, Chen L and Wu K 2013 ACS Nano 7 9049
[26] Chen L, Li H, Feng B, Ding Z, Qiu J, Cheng P, Wu K and Meng S 2013 Phys. Rev. Lett. 110 085504
[27] Chen L, Feng B and Wu K 2013 Appl. Phys. Lett. 102 081602
[28] Liu G, Wang G, Zhu Y, Zhang H, Zhang G, Wang X, Zhou Y, Zhang W, Liu H, Zhao L, Meng J, Dong X, Chen C, Xu Z and Zhou X J 2008 Rev. Sci. Instrum. 79 023105
[29] Zhao L et al to be published
[30] Ezawa M 2013 Phys. Rev. Lett. 110 026603
[31] Liu G, Wu M S, Ouyang C Y and Xu B 2012 Europhys. Lett. 99 17010
[32] Kaloni T P, Cheng Y C and Schwingenschlogl U 2013 J. Appl. Phys. 113 104305 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
