| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
|
|
|
|
Enhanced Total Ionizing Dose Hardness of Deep Sub-Micron Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors by Applying Larger Back-Gate Voltage Stress |
| ZHENG Qi-Wen1,2,3, CUI Jiang-Wei1,2, YU Xue-Feng1,2**, GUO Qi1,2, ZHOU Hang1,2,3, REN Di-Yuan1,2 |
1Key Laboratory of Functional Materials and Devices for Special Environments, Xinjiang Technical Institute of Physics and Chemistry, Chinese Academy of Sciences, Urumqi 830011
2Xinjiang Key Laboratory of Electronic Information Material and Device, Urumqi 830011
3University of Chinese Academy of Sciences, Beijing 100049
|
|
| Cite this article: |
|
ZHENG Qi-Wen, CUI Jiang-Wei, YU Xue-Feng et al 2014 Chin. Phys. Lett. 31 126101 |
|
|
|
|
Abstract The larger back-gate voltage stress is applied on 130 nm partially depleted silicon-on-insulator n-type metal-oxide-semiconductor field-effect transistors isolated by shallow trench isolation. The experimental results show that the back-gate sub-threshold hump of the device is eliminated by stress. This observed behavior is caused by the high electric field in the oxide near the bottom corner of the silicon island. The total ionizing dose hardness of devices with pre back-gate stress is enhanced by the interface states induced by stress.
|
|
|
Published: 12 January 2015
|
|
| PACS: |
61.80.Ed
|
(γ-ray effects)
|
| |
73.40.Qv
|
(Metal-insulator-semiconductor structures (including semiconductor-to-insulator))
|
| |
85.30.Tv
|
(Field effect devices)
|
|
|
|
|
|
[1] Schwank J R, Cavrois V F and Shaneyfelt M R 2003 IEEE Trans. Nucl. Sci. 50 522
[2] Bi J S, Liu G, Luo J J and Han Z S 2013 Acta Phys. Sin. 62 208501 (in Chinese)
[3] Zhang Y W, Huang H X, Bi D W, Tang M H and Zhang Z X 2014 Nucl. Instrum. Methods Phys. Res. Sect. A 745 128
[4] Ning B X, Hu Z Y, Zhang Z X, Bi D W, Huang H X, Dai R F, Zhang Y W and Zou S C 2013 Acta Phys. Sin. 62 076104
[5] Huang H X, Bi D W, Peng C, Zhang Y W and Zhang Z X 2013 Chin. Phys. Lett. 30 080701
[6] Melanie J S, Isabel Y Y, Dimitri A A and Brian S D 1996 Proceedings 1996 IEEE International SOI Conference (Sanibel Island, FL 30 September–03 October 1996) p 84
[7] Mei B, Bi J S, Li D L, Liu S and Han Z S 2012 J. Semicond. 33 024002
[8] Ning B X, Bi D W, Huang H X, Zhang Z X, Chen M and Zhou S C 2013 Microelectron. J. 44 86
[9] Ning B X, Bi D W, Huang H X, Zhang Z X, Hu Z Y, Chen M and Zhou S C 2013 Microelectron. Reliab. 53 259
[10] Jeffrey W S, Chuan L and Gregory 1999 IEEE Electron Device Lett. 20 248
[11] Snow E H 1967 Solid State Commun. 5 813
[12] Ravindra N M and Zhao J 1992 Smart Mater. Struct. 1 197
[13] Zhang G Q, Yan R L, Yu X F, Gao J X and Ren D Y 1998 Chin. J. Semicond. 19 616 (in Chinese)
[14] Masao I and Shirafuji J J 1995 Jpn. J. Appl. Phys. 34 L1315
[15] Turowski M, Raman A and Schrimpf R D 2004 IEEE Trans. Nucl. Sci. 51 3166 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
