| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Junctionless Coplanar-Gate Oxide-Based Thin-Film Transistors Gated by Al2O3 Proton Conducting Films on Paper Substrates |
| WU Guo-Dong1**, ZHANG Jin2, WAN Xiang1 |
1School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
2Ningbo Institute of Materials Technology and Engineering, Chinese Academy of Sciences, Ningbo 315201
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| Cite this article: |
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WU Guo-Dong, ZHANG Jin, WAN Xiang 2014 Chin. Phys. Lett. 31 108505 |
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Abstract Nanogranular Al2O3 films deposited by plasma-enhanced chemical vapor deposition show a high proton conductivity of ～1.25 × 10?4 S/cm and a huge electric-double-layer (EDL) capacitance of ～4.8 μF/cm2 at room temperature. Using nanogranular Al2O3 proton conducting films as gate dielectrics, junctionless indium-zinc-oxide (IZO) thin-film transistors (TFTs) with a coplanar-gate configuration are fabricated. The unique feature of such junctionless TFTs is that the channel and source/drain electrodes are the same thin IZO film without any source/drain junction. Due to the strong EDL capacitive coupling triggered by mobile protons in nanogranular Al2O3, these TFTs show a low-voltage operation of 1.5 V and a high performance with a large field-effect mobility (>18 cm2/V?s), a small subthreshold swing (<130 mV/decade) and a high current on/off ratio (>106). Our results demonstrate that such junctionless TFTs gated by Al2O3 proton conducting films have great potential applications in low-power and low-cost electronics.
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Published: 31 October 2014
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| PACS: |
85.35.-p
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(Nanoelectronic devices)
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79.60.Jv
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(Interfaces; heterostructures; nanostructures)
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73.61.Jc
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(Amorphous semiconductors; glasses)
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