| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Optical Performance of N-Face AlGaN Ultraviolet Light Emitting Diodes |
| YU Hong-Ping, LI Shi-Bin**, ZHANG Peng, WU Shuang-Hong, WEI Xiong-Bang, WU Zhi-Ming, CHEN Zhi |
State Key Laboratory of Electronic Thin Films and Integrated Devices, School of Optoelectronic Information, University of Electronic Science and Technology of China, Chengdu 610054
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| Cite this article: |
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YU Hong-Ping, LI Shi-Bin, ZHANG Peng et al 2014 Chin. Phys. Lett. 31 108502 |
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Abstract The optical property and injection efficiency of N-face AlGaN based ultraviolet light emitting diodes (UV-LEDs) are studied and compared with Ga-face AlGaN based UV-LEDs. A staircase electron injector is introduced in the N-face AlGaN based UV-LED. The electroluminescence spectra, power-current performance curves, energy band diagrams, carrier concentration and radiative recombination rate are numerically calculated. The results indicate that the N-face UV-LED has a better optical performance than the Ga-face UV-LED, and the injection efficiency is enhanced owing to the fact that the staircase electron injector is available for UV-LEDs.
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Published: 31 October 2014
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| PACS: |
85.60.Jb
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(Light-emitting devices)
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73.50.-h
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(Electronic transport phenomena in thin films)
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87.15.A-
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(Theory, modeling, and computer simulation)
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73.61.Ey
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(III-V semiconductors)
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