| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Chemical Composition Dependent Elastic Strain in AlGaN Epilayers |
| WANG Huan1,2, YAO Shu-De1** |
1State Key Laboratory of Nuclear Physics and Technology, Peking University, Beijing 100871
2Chinese Academy of Engineering Physics, P.O. Box 919-71, Mianyang 621900 |
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| Cite this article: |
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WANG Huan, YAO Shu-De 2014 Chin. Phys. Lett. 31 106101 |
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Abstract Systematic investigations are performed on a set of AlxGa1−xN/GaN heterostructures grown by metalorganic chemical vapor deposition on sapphire (0001). The Al composition x is determined by Rutherford backscattering. By using high resolution x-ray diffraction and the channeling scan around an off-normal <1213> axis in {1010} plane of the AlGaN layer, the tetragonal distortion eT caused by the elastic strain in the epilayer is determined. The results show that eT in the high-quality AlGaN layers is dramatically influenced by the Al content.
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Published: 31 October 2014
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| PACS: |
61.05.cp
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(X-ray diffraction)
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82.80.Yc
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(Rutherford backscattering (RBS), and other methods ofchemical analysis)
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81.05.Ea
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(III-V semiconductors)
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