| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
Enhanced Radiation Sensitivity in Short-Channel Partially Depleted Silicon-on-Insulator n-Type Metal-Oxide-Semiconductor Field Effect Transistors |
| PENG Chao1,2**, ZHANG Zheng-Xuan1,2, HU Zhi-Yuan1,2, HUANG Hui-Xiang1, NING Bing-Xu1, BI Da-Wei1 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Science and Technology on Reliability Physics and Application Technology of Electronic Component Laboratory, Guangzhou 510610
|
|
| Cite this article: |
|
PENG Chao, ZHANG Zheng-Xuan, HU Zhi-Yuan et al 2013 Chin. Phys. Lett. 30 098502 |
|
|
|
|
Abstract The total ionizing dose effects of partially depleted silicon-on-insulator (SOI) transistors in a 0.13 μm technology are studied by 60Co γ-ray irradiation. Radiation enhanced drain-induced barrier lowering (DIBL) under different bias conditions is related to the parasitic bipolar in the SOI transistor and oxide trapped charge in the buried oxide, and it is experimentally observed for short channel transistors. The enhanced DIBL effect manifests as the DIBL parameter increases with total dose. Body doping concentration is a key factor affecting the total ionizing dose effect of the transistor. The low body doping transistor exhibits not only significant front gate threshold voltage shift as a result of the coupling effect, but also great off-state leakage at high drain voltage due to the enhanced DIBL effect.
|
|
|
Received: 02 May 2013
Published: 21 November 2013
|
|
| PACS: |
85.30.-z
|
(Semiconductor devices)
|
| |
61.80.-x
|
(Physical radiation effects, radiation damage)
|
| |
07.87.+v
|
(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
|
|
|
|
|
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
