| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Dislocation Multiplication by Single Cross Slip for FCC at Submicron Scales |
| CUI Yi-Nan, LIU Zhan-Li, ZHUANG Zhuo** |
Applied Mechanics Laboratory, School of Aerospace, Tsinghua University, Beijing 100084
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| Cite this article: |
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CUI Yi-Nan, LIU Zhan-Li, ZHUANG Zhuo 2013 Chin. Phys. Lett. 30 046103 |
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Abstract The operation mechanism of single cross slip multiplication (SCSM) is investigated by studying the response of one dislocation loop expanding in face-centered-cubic (FCC) single crystal using three-dimensional discrete dislocation dynamic (3D-DDD) simulation. The results show that SCSM can trigger highly correlated dislocation generation in a short time, which may shed some light on understanding the large strain burst observed experimentally. Furthermore, we find that there is a critical stress and material size for the operation of SCSM, which agrees with that required to trigger large strain burst in the compression tests of FCC micropillars.
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Received: 22 November 2012
Published: 28 April 2013
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| PACS: |
61.72.Hh
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(Indirect evidence of dislocations and other defects (resistivity, slip, creep, strains, internal friction, EPR, NMR, etc.))
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62.20.fq
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(Plasticity and superplasticity)
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62.20.F-
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(Deformation and plasticity)
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Abstract
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