| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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A Continuous Current Model of Accumulation Mode (Junctionless) Cylindrical Surrounding-Gate Nanowire MOSFETs |
| JIN Xiao-Shi1**, LIU Xi1, KWON Hyuck-In2, LEE Jong-Ho3 |
1School of Information Science and Engineering, Shenyang University of Technology, Shenyang 110023
2School of Electrical and Electronics Engineering, Chung-Ang University, Seoul 156-756, Korea
3School of EECS Engineering and ISRC (Inter-University Semiconductor Research Center), Seoul National University, Shinlim-Dong, Kwanak-Gu, Seoul 151-742, Korea
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| Cite this article: |
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JIN Xiao-Shi, LIU Xi, KWON Hyuck-In et al 2013 Chin. Phys. Lett. 30 038502 |
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Abstract A continuous current model of accumulation mode or so-called junctionless (JL) cylindrical surrounding-gate Si Nanowire metal-oxide-silicon field effect transistors (MOSFETs) is proposed. The model is based on an approximated solution of Poisson's equation considering both body doping and mobile charge concentrations. It is verified by comparing with three-dimensional simulation results using SILVACO Atlas TCAD which shows good agreement. Without any empirical fitting parameters, the proposed continuous current model of JL SRG MOSFETs is valid for all the operation regions.
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Received: 08 August 2012
Published: 29 March 2013
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| PACS: |
85.30.De
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(Semiconductor-device characterization, design, and modeling)
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85.30.Tv
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(Field effect devices)
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85.40.Ry
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(Impurity doping, diffusion and ion implantation technology)
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