| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
|
|
|
|
An Analytical Model of SiGe Heterojunction Bipolar Transistors on SOI Substrate for Large Current Situations |
| XU Xiao-Bo1**, ZHANG Bin2, YANG Yin-Tang2, LI Yue-Jin2 |
1School of Electronic and Control Engineering, Road Traffic Detection and Equipment Engineering Research Center, Chang'an University, Xi'an 710064
2Key Laboratory of Ministry of Education for Wide Band-Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University, Xi'an 710071
|
|
| Cite this article: |
|
XU Xiao-Bo, ZHANG Bin, YANG Yin-Tang et al 2013 Chin. Phys. Lett. 30 028502 |
|
|
|
|
Abstract The large current effect of silicon germanium heterojunction bipolar transistors fabricated on thin silicon-on-insulator is included in the model. As the current is two-dimensional, the injection for large current is vertical plus horizontal and is quite different from that of the bulk device. Critical parameters modeling the large current, such as the collector injection width, the hole density and the corresponding potential in the injection region, are discussed, and the influence to the transit time is also analyzed.
|
|
|
Received: 25 April 2012
Published: 02 March 2013
|
|
| PACS: |
85.30.Pq
|
(Bipolar transistors)
|
| |
85.30.De
|
(Semiconductor-device characterization, design, and modeling)
|
| |
85.30.-z
|
(Semiconductor devices)
|
|
|
|
|
|
[1] Heinemann B, Barth R, Bolze D, Drews J, Fischer G G, Fox A, Fursenko O, Grabolla T, Haak U, Knoll D, Kurps R, Lisker M, Marschmeyer S, Rücker H, Schmidt D, Schmidt J, Schubert M A, Tillack B, Wipf C, Wolansky D and Yamamoto Y 2010 IEEE Int. Electron. Devices Meeting IEDM 2010 (San Francisco, CA, United States, 6–8 December 2010) p 30.5.1
[2] Shahidi G G 2002 IBM J. Res. Dev. 46 121
[3] Cai J, Ajmera A, Ouyang C, Oldiges P, Steigerwalt M, Stein K, Jenkins K, Shahidi G and Ning T 2002 Symposium VLSI Technol. Digest Tech. Papers (Honolulu HI, United States, 11–13 June 2002) p 172
[4] Avenier G, Fregonese S, Chevalier P, Bustos J, Saguin F, Schwartzmann T, Maneux C, Zimmer T and Chantre A 2008 IEEE Trans. Electron Devices 55 585
[5] Xu X B and Zhang H M 2011 Chin. Phys. Lett. 28 078505
[6] Fregonese S, Avenier G, Maneux, C, Chantre A and Zimmer T 2006 IEEE Trans. Electron Devices 53 296
[7] Fregonese S, Avenier G, Maneux, C, Chantre A and Zimmer T 2005 IEEE Bipolar/BiCMOS Circuits Technol. Meeting (Santa Barbara CA, USA, 9–11 October 2005) p 184
[8] Xu X B, Xu K X and Zhang H M 2011 Chin. Phys. B 20 098501
[9] Xu X B, Zhang H M and Hu H Y 2011 Acta Phys. Sin. 60 118501 (in Chinese)
[10] Xu X B, Zhang H M, Hu H Y and Ma J L 2011 Chin. Phys. B 20 058502
[11] Kull G M, Nagel W, Lee S W, Lloyd P, Prendergast E J and Dirks H 1985 IEEE Trans. Electron Devices 32 1103
[12] Chen B Y and Kuo J B 1995 Solid State Electron. 38 1282
[13] Suzuki K 2001 IEEE Trans. Electron Devices 48 2102 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
