| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
High Intensity Single-Mode Peak Observed in the Lasing Spectrum of InAs/GaAs Quantum Dot Laser |
| YUE Li1**, GONG Qian1, YAN Jin-Yi1, CAO Chun-Fang1, LIU Qing-Bo1, WANG Yang1, CHENG Ruo-Hai2, WANG Hai-Long2, LI Shi-Guo3 |
1State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Department of Physics, Qufu Normal University, Qufu 273165
3Department of Electronic Communication and Technology, Shenzhen Institute of Information Technology, Shenzhen 518172
|
|
| Cite this article: |
|
YUE Li, GONG Qian, YAN Jin-Yi et al 2013 Chin. Phys. Lett. 30 024209 |
|
|
|
|
Abstract We report on abnormal lasing spectra of InAs/GaAs quantum dot lasers, where a single-mode peak exists with optical intensity several times larger than that of other modes. The maximum side mode suppression ratio of the single-mode peak is measured to be 10.11 dB at 29°C with injection current of 413 mA. It is found that the emergence of this abnormal lasing spectrum happens in a certain range of operation temperature and current. The sharp increase in optical intensity of the single-mode peak is closely related to the disappearance of optical lasing modes located at the higher energy side of the enhanced mode.
|
|
|
Received: 12 November 2012
Published: 02 March 2013
|
|
| PACS: |
42.55.Px
|
(Semiconductor lasers; laser diodes)
|
| |
42.60.Lh
|
(Efficiency, stability, gain, and other operational parameters)
|
| |
78.67.Hc
|
(Quantum dots)
|
|
|
|
|
|
[1] Kirstaedter N, Schmidt O, Ledentsov N et al 1996 Appl. Phys. Lett. 69 1226
[2] Huffaker D L, Park G, Zou Z et al 1998 Appl. Phys. Lett. 73 2564
[3] Mi Z, Bhattacharya P and Fathpour S 2005 Appl. Phys. Lett. 86 153109
[4] Li S G, Gong Q, Lao Y F et al 2008 Appl. Phys. Lett. 93 111109
[5] Bhattacharya P, Mi Z, Yang J et al 2009 J. Cryst. Growth 311 1625
[6] Leonard D, Krishnamurthy M, Reaves C M et al 1993 Appl. Phys. Lett. 63 3203
[7] Leonard D, Fafard S, Pond K et al 1994 J. Vac. Sci. Technol. B 12 2516
[8] Qasaimeh O 2003 IEEE Trans. Electron Devices 50 1575
[9] Deppe D G, Freisem S, Huang H et al 2005 J. Phys. D 38 2119
[10] Liu J R, Lu Z G, Raymond S et al 2008 Opt. Lett. 33 1702
[11] Li S G, Gong Q, Lao Y F et al 2009 Appl. Phys. Lett. 95 251111
[12] Kirstaedter N, Ledentsov N N, Grundmann M et al 1994 Electron. Lett. 30 1416
[13] Gong Q, Chen P, Li S G et al 2011 J. Cryst. Growth 323 450
[14] Harris L, Mowbray D J, Skolnick M S et al 1998 Appl. Phys. Lett. 73 969 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
