| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
|
|
|
|
Evolution of Residual Stress and Structure in YSZ/SiO2 Multilayers with Different Modulation Ratios |
| XIAO Qi-Ling**, HU Guo-Hang, HE Hong-Bo, SHAO Jian-Da |
Key Laboratory of Materials for High Power Lasers, Chinese Academy of Sciences, PO Box 800-211, Shanghai 201800
|
|
| Cite this article: |
|
XIAO Qi-Ling, HU Guo-Hang, HE Hong-Bo et al 2013 Chin. Phys. Lett. 30 024206 |
|
|
|
|
Abstract The multilayer (ML) YSZ/SiO2 films with different modulation ratios ranging from 1:3, 4:9, 1:1 to 3:1 (the thickness ratio of the YSZ to SiO2) are deposited on BK7 glass substrates by electron beam evaporation under the same processing conditions. The effect of modulation ratio on the residual stresses and structure are investigated by an optical interferometer and Grazing incidence x-ray diffraction. The results show that the total residual stress in MLs is compressive and decreases to tensile when the modulation ratio is changed from 1:3 to 3:1. The YSZ films are of cubic phase structure and the SiO2 films are amorphous in all the MLs. The change of residual stress in these MLs can be attributed to the variation of an individual layer?s stress with thickness, which indicates that adjusting the thickness ratio of two materials is an effective measure for depositing near-zero stress MLs.
|
|
|
Received: 26 October 2012
Published: 02 March 2013
|
|
|
|
|
|
|
|
[1] Sullivan B T and Dobrowolski J A 1993 Appl. Opt. 32 2351
[2] Liu G H, Xiao Q L, Jin Y X, Zhang W L, He H B and Fan Z X 2010 Vacuum 84 778
[3] Zhan F, Wang H L, He J F, Wang J, Huang S S, Ni H Q and Niu Z C 2011 Chin. Phys. Lett. 28 047802
[4] Kesler O, Finot M, Suresh S and Sampath S 1997 Acta Mater. 8 3123
[5] Montay G, Cherouat A, Lu J, Baradel N and Bianchi L 2002 Surf. Coat. Technol. 155 152
[6] Fang Z J, Xia Y B and Wang L J 2003 Acta Phys. Sin. 52 1028 (in Chinese)
[7] Gessner T, Doetzel W, Billep D, Hahn R, Kaufmann C, Kehr K, Kurth S, Steiniger C and Wollmann U 1997 Proc. SPIE 296 3008
[8] Richter F, Kupfer H, Schlott P, Gessner T and Kaufmann C 2001 Thin Solid Films 389 278
[9] Shao S Y, Shao J D, He H B and Fan Z X 2005 Opt. Lett. 30 2119
[10] Chen Y, Jiang Y, Xu P Q, Ma Z G, Wang X L, Wang L, Jia H Q and Chen H 2011 Chin. Phys. Lett. 28 048101
[11] Sprio S, Guicciardi S, Bellosi A and Pezzotti G 2006 Surf. Coat. Technol. 200 4579
[12] Chen Z, Prud'homme N, Wang B and Ji V 2011 Surf. Coat. Technol. 206 405
[13] Wu S G, Zhang H Y, Tiang L, Xia Z L, Shao J D and Fan Z X 2006 Appl. Surf. Sci. 253 1561
[14] Heiroth S, Ghisleni R, lippert T, Michler J and Wokaun A 2011 Acta Mater. 59 2330
[15] Xiao Q L, Xu C, Shao S Y, Shao J D and Fan Z X 2008 Vacuum 83 266
[16] Xiao Q L, Shao S Y, H E H B, Shao J D and Fan Z X 2008 Chin. Phys. Lett. 25 3433
[17] Shao S Y, Tian G L, Fan Z X and Shao J D 2005 Acta Opt. Sin. 25 126(in Chinese)
[18] Shi G W, Shao J D, Yi K and Fan Z X 2005 U. S. Patent No 1696328 (8 June 2005)
[19] Tamulevicius S 1998 Vacuum 51 127
[20] S Krzypek S J, Baczmanski A, Ratuszek W and Kusior E 2001 J. Appl. Crystallogr. 34 427
[21] Hsueh C H 2002 Thin Solid Films 418 182 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
