Chin. Phys. Lett.  2013, Vol. 30 Issue (12): 128401    DOI: 10.1088/0256-307X/30/12/128401
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Magnetic-Particle-Composite-Medium-Filled Stacked-Spiral Inductors for Radio-Frequency CMOS Applications
ZHAN Jing1,2**, CAI Hua-Lin1, CHEN Xiao1, WANG Xin3, FANG Qiang3, YANG Yi1**, REN Tian-Ling1**, LIU Li-Tian1, LI Xin-Xin2, WANG Albert3, YANG Chen2
1Institute of Microelectronics, and Tsinghua National Laboratory for Information Science and Technology, Tsinghua University, Beijing 100084
2Shanghai Institute of Microsystem and Information Technology, Shanghai 200050
3Department of Electrical Engineering, University of California, Riverside, CA 92521, USA
Cite this article:   
ZHAN Jing, CAI Hua-Lin, CHEN Xiao et al  2013 Chin. Phys. Lett. 30 128401
Download: PDF(1271KB)  
Export: BibTeX | EndNote | Reference Manager | ProCite | RefWorks
Abstract Magnetic-particle-composite-medium-filled stacked-spiral inductors for rf complementary metal oxide semiconductor (CMOS) applications in GHz are demonstrated. The new inductor features a nearly closed magnetic circuit loop, an optimized high-permeability and low-loss sub-1 μm magnetic particles' composite core, and a developed 0.18-μm CMOS-compatible device fabrication process. An equivalent circuit model with structural amplifying factors is proposed and modeled. The prototype of the 6-level stacked inductor with Co2Z magnetic-particles-composite-medium filling increases the inductance L by 50%, and quality factor Q by 37% at frequencies as high as 1 GHz, with high inductance density as 825 nH/mm2 and a reduced size area by 80% compared to the planar spiral inductor.
Received: 23 May 2013      Published: 13 December 2013
PACS:  84.32.-y (Passive circuit components)  
TRENDMD:   
URL:  
https://cpl.iphy.ac.cn/10.1088/0256-307X/30/12/128401       OR      https://cpl.iphy.ac.cn/Y2013/V30/I12/128401
Service
E-mail this article
E-mail Alert
RSS
Articles by authors
ZHAN Jing
CAI Hua-Lin
CHEN Xiao
WANG Xin
FANG Qiang
YANG Yi
REN Tian-Ling
LIU Li-Tian
LI Xin-Xin
WANG Albert
YANG Chen
[1] Gu L et al 2007 IEEE Trans. Electron Devices 54 882
[2] Chen K J et al 2004 IEEE Electron Device Lett. 25 363
[3] Gardner D S et al 2009 IEEE Trans. Magn. 45 4760
[4] Yang C et al 2009 IEEE Trans. Electron Devices 56 3133
[5] Xu W et al 2011 J. Appl. Phys. 109 07A316
[6] Gardner D S et al 2008 J. Appl. Phys. 103 07E927
[7] Kim G et al 2008 Microwave Opt. Technol. Lett. 50 676
[8] Zhuang Y et al 2007 Solid-State Electron. 51 405
[9] Yamaguchi M et al 2005 IEEE MTT-S Int. Microwave Symp. 351
[10] Zhao J H et al 2005 IEEE Trans. Magn. 41 2334
[11] Kim G et al 2008 Microwave Opt. Technol. Lett. 50 676
[12] Jiang R F et al 2007 IEEE Trans. Magn. 43 3930
[13] Xu W et al 2011 IEEE Electron Device Lett. 32 69
[14] Wu L Z et al 2006 J. Appl. Phys. 99 083905
[15] Yang C et al 2009 IEEE Trans. Electron Devices 56 3313
[16] Zhan J et al 2012 Tsinghua Sci. Technol. 17 78
[17] Zhan J et al 2012 IEEE Microwave Wireless Compon. Lett. 22 29
[18] Yue C P et al 1996 IEEE Electron. Devices Meeting (IEDM) (8–11 December 1996) p 155
[19] Gao W et al 2006 IEEE Trans. Microwave Theory Tech. 54 1055
[20] Yue Z X et al 2000 J. Magn. Magn. Mater. 208 55
[21] Zhang H G et al 2002 IEEE Trans. Magn. 38 1797
[22] Zhang H G et al 2001 J. Eur. Ceram. Soc. 21 149
[23] Zhan J et al 2013 Sens. Actuators A 195 231
Related articles from Frontiers Journals
[1] Lei Zhu, Yong-Wei Chang, Nan Gao, Xin Su, YeMin Dong, Lu Fei, Xing Wei, Xi Wang. Resistivity and Radio-Frequency Properties of Two-Generation Trap-Rich Silicon-on-Insulator Substrates[J]. Chin. Phys. Lett., 2018, 35(4): 128401
[2] Shi Cheng, Yong-Wei Chang, Nan Gao, Ye-Min Dong, Lu Fei, Xing Wei, Xi Wang. Radio-Frequency Characteristics of Partial Dielectric Removal HR-SOI and TR-SOI Substrates[J]. Chin. Phys. Lett., 2017, 34(6): 128401
[3] Gang Dou, Yang Yu, Mei Guo, Yu-Man Zhang, Zhao Sun, Yu-Xia Li. Memristive Behavior Based on Ba-Doped SrTiO$_{3}$ Films[J]. Chin. Phys. Lett., 2017, 34(3): 128401
[4] Xiao-Pin Tang, Zi-Qiang Yang, Zong-Jun Shi, Feng Lan. Design of a Broadband E-Plane Power Combiner Based on Quarter-Arc Bent Rectangular Waveguides for Sub-THz and THz Wave[J]. Chin. Phys. Lett., 2016, 33(08): 128401
Viewed
Full text


Abstract