| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Optoelectronic Properties of Pure and Co Doped Indium Oxide by Hubbard and modified Becke–Johnson Exchange Potentials |
| H. A. Rahnamaye Aliabad1*, M. Bazrafshan2, H. Vaezi2, Masood Yousaf3, Junaid Munir3, M. A. Saeed3 |
1Department of Physics, Hakim Sabzevari University, Sabzevar, Iran
2Department of Physics, Khayyam Institute of Higher Education, Mashhad, Iran
3Department of Physics, Universiti Teknologi Malaysia, Skudai 81310, Johor, Malaysia
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| Cite this article: |
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H. A. Rahnamaye Aliabad, M. Bazrafshan, H. Vaezi et al 2013 Chin. Phys. Lett. 30 127101 |
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Abstract Structural and optoelectronic properties of pure and Co doped In2O3 are studied by employing the full-potential linearized augmented plane wave method, which is known to produce highly accurate results. First principles calculations are performed with ordinary generalized gradient approximation (GGA) along with new Hubbard and modified Becke–Johnson exchange (mBJ) potential techniques. Improved band gap results are obtained for In2O3 with GGA+U and mBJ. In the case of mBJ, the band gap values are 3.5 eV and 3.4 eV for rhombohedral and cubic phases, which are in close agreement with the experimental data. Substitution of In by Co 25% alters the energy gap and a spin splitting effect is observed in these phases. For the spin-up state, it remains semiconductor, whereas for the spin-down state it shows semimetallic behavior. The value of static refractive index n(0) is 1.74 for the cubic phase, while in rhombohedral phase the values of n(0) are 1.77 and 1.74 along xx and zz optical axes, respectively. The calculated optical properties conform anisotropy in the rhombohedral phase and these materials can be potential candidates for the optoelectronics applications.
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Received: 19 August 2013
Published: 13 December 2013
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| PACS: |
71.15.Mb
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(Density functional theory, local density approximation, gradient and other corrections)
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71.20.Be
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(Transition metals and alloys)
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72.25.Dc
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(Spin polarized transport in semiconductors)
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