| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Enhanced Crystallization and Sensitization of Si Nanocrystals in Al2O3:Er/Si:Er Multilayers |
| WANG Jun-Zhuan**, YANG Xin-Xin, WEI Xiao-Xu, YU Lin-Wei, SHI Yi** |
School of Electronic Science and Engineering, and Jiangsu Provincial Key Laboratory of Photonic and Electronic Materials, Nanjing University, Nanjing 210093
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| Cite this article: |
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WANG Jun-Zhuan, YANG Xin-Xin, WEI Xiao-Xu et al 2013 Chin. Phys. Lett. 30 117801 |
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Abstract Enhanced crystallization of Si nanocrystals (Si NCs) has been achieved in an Al2O3:Er/Si:Er multilayer structure, which is fabricated by pulsed laser deposition and subsequent rapid thermal annealing. The Er atoms introduce strains in the initial amorphous Si layers and serve as nucleation centers that enhance the crystallization of Si NCs at low annealing temperatures. The average size of Si NCs is well controlled by adjusting the Si layer thickness. Thanks to the formation of Si NCs and the favored chemical environment of Er3+ after annealing around 600–700°C, optimized photoluminescence peaked at 1.54 μm has been obtained. The present results stress the importance of controlling the formation of Si NCs to improve the performance of Er3+ luminescence.
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Received: 29 July 2013
Published: 30 November 2013
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| PACS: |
78.30.Am
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(Elemental semiconductors and insulators)
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68.55.Ln
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(Defects and impurities: doping, implantation, distribution, concentration, etc.)
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42.72.Ai
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(Infrared sources)
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68.37.Lp
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(Transmission electron microscopy (TEM))
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68.37.Yz
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(X-ray microscopy)
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