CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Degradation Characteristics of Resistive Switching Memory Devices Correlated with Electric Field Induced Ion-Migration Effect of Anode |
LIU Rui, QIU Gang, CHEN Bing, GAO Bin, KANG Jin-Feng** |
Institute of Microelectronics, Peking University, Beijing 100871
|
|
Cite this article: |
LIU Rui, QIU Gang, CHEN Bing et al 2013 Chin. Phys. Lett. 30 117104 |
|
|
Abstract The electrode effect of resistive switching memory devices on resistive switching behaviors is studied. Compared to TiN- or Ti-electrode devices, significantly reduced switching parameters such as resistance-ratio of high- and low-resistance states and set-voltage are observed experimentally in the Al-electrode devices when a positive voltage bias is applied to the Al-electrode during the forming process. An electric-field induced metal-ion-migration effect is proposed to elucidate the observed electrode dependence of the resistive switching behaviors in the resistive switching memory devices. The further measured data identify the validity of the proposed mechanism.
|
|
Received: 02 July 2013
Published: 30 November 2013
|
|
PACS: |
71.30.+h
|
(Metal-insulator transitions and other electronic transitions)
|
|
77.55.-g
|
(Dielectric thin films)
|
|
73.90.+f
|
(Other topics in electronic structure and electrical properties of surfaces, interfaces, thin films, and low-dimensional structures)
|
|
|
|
|
[1] Wong H S P, Li H Y, Yu S M, Chen Y S, Wu Y, Chen P S, Lee B, Chen F T and Tsai M J 2012 Proc. IEEE 100 1951 [2] Waser R and Aono M 2007 Nat. Mater. 6 833 [3] Kwon D H 2010 Nat. Nanotechnol. 5 148 [4] Fang T N, Kaza S, Haddad S, Chen A, Wu Y C, Lan Z D, Avanzino S, Liao D X, Gopalan C, Choi S, Mahdavi S, Buynoski M, Lin Y, Marrian C, Bill C, VanBuskirk M and Taguchi M 2006 IEEE Int. Electron Devices Meet. 1-4 [5] Zhang H W, Gao B, Sun B, Chen G P, Lang Z, Liu L F, Liu X Y, Lu J, Han R Q, Kang J F and Yu B 2010 Appl. Phys. Lett. 96 123502 [6] Seung W R, Young B A, Hyeong J K and Yoshio N Y 2012 Appl. Phys. Lett. 100 133502 [7] Gao B, Kang J F, Liu L F, Liu X Y and Yu B 2011 Appl. Phys. Lett. 98 232108 [8] Do Y H, Kwak J S, Hong J P et al 2008 J. Appl. Phys. 104 114512 [9] Lee C B, Kang B S, Benayad A, Lee M J, Ahn S E, Kim K H, Stefanovich G, Park Y and Yoo J K 2008 Appl. Phys. Lett. 93 042115 [10] Wang S Y, Lee D Y, Tseng T Y and Lin C Y 2009 Appl. Phys. Lett. 95 112904 [11] Huang P, Liu X Y, Li W H, Deng Y X, Chen B, Lu Y, Gao B, Zeng L, Wei K L, Du G, Zhang X and Kang J F 2012 IEDM 26.6.1 [12] Hokari Y 1985 J. Appl. Phys. 58 3536 [13] Lysaght P S, Woicik J C, Sahiner M A, Price J, Weiland C and Kirsch P D 2012 J. Appl. Phys. 112 064118 [14] Nam K T, Darra A, Kim S H and Kim K B 2001 Appl. Phys. Lett. 79 2549 [15] Li S, Lee Y K, Gao W, White T, Dong Z L and Latt K M 2001 J. Vac. Sci. Technol. B 19 388 |
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|