| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Performance Improved by Incorporating of Ru Atoms into Zr-Si Diffusion Barrier for Cu Metallization |
| WANG Ying1**, SONG Zhong-Xiao2, ZHANG Mi-Lin3 |
1College of Information and Communication Engineering, Harbin Engineering University, Harbin 150001
2State-Key Laboratory for Mechanical Behavior of Materials, Xi'an Jiaotong University, Xi'an 710049
3Key Laboratory of Superlight Materials and Surface Technology (Ministry of Education), Harbin Engineering University, Harbin 150001 |
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| Cite this article: |
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WANG Ying, SONG Zhong-Xiao, ZHANG Mi-Lin 2012 Chin. Phys. Lett. 29 098501 |
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Abstract Thin Ru21Zr64Si15 films deposited on Si substrates by radio frequency reactive magnetron sputtering are studied and evaluated as diffusion barriers for Cu metallization. Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structure samples are prepared under the same procedures for comparison. The thermal stability, phase formation, surface morphology and atomic depth profile of the Cu/Ru21Zr64Si15/Si and Cu/Zr67Si33/Si structures before and after annealing at different temperatures are investigated. In conjunction with these analyses, the Cu/Ru21Zr64Si15/Si contact system shows high thermal stability at least up to 650°C. The results obtained reveal that the incorporation of Ru atoms into the Zr67Si33 barrier layer is shown to be beneficial for improving the thermal stability of the Cu/barrier/Si contact system.
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Received: 03 February 2012
Published: 01 October 2012
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| PACS: |
85.40.Ls
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(Metallization, contacts, interconnects; device isolation)
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68.37.-d
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(Microscopy of surfaces, interfaces, and thin films)
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81.40.Ef
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(Cold working, work hardening; annealing, post-deformation annealing, quenching, tempering recovery, and crystallization)
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68.35.-p
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(Solid surfaces and solid-solid interfaces: structure and energetics)
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