Chin. Phys. Lett.  2012, Vol. 29 Issue (9): 098102    DOI: 10.1088/0256-307X/29/9/098102
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
A Self-Aligned Process to Fabricate a Metal Electrode-Quantum Dot/Nanowire-Metal Electrode Structure with 100% Yield
FU Ying-Chun1,2, WANG Xiao-Feng1, FAN Zhong-Chao1, YANG Xiang1, BAI Yun-Xia1, ZHANG Jia-Yong 1,2, MA Hui-Li1,2, JI An1, YANG Fu-Hua1,2**
1Engineering Research Center for Semiconductor Integrated Technology, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
2The State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
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FU Ying-Chun, WANG Xiao-Feng, FAN Zhong-Chao et al  2012 Chin. Phys. Lett. 29 098102
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Abstract Using lateral phase change random access memory (PCRAM) for demonstration, we report a self-aligned process to fabricate a metal electrode-quantum dot(QD)/nanowire(NW)-metal electrode structure. Due to the good confinement and coupling between the Ge2Sb2Te5 (GST) QD and the tungsten electrodes, the device shows a threshold current and voltage as small as 2.50 μA and 1.08 V, respectively. Our process is highlighted with good controllability and repeatability with 100% yield, making it a promising fabrication process for nanoelectronics.
Received: 14 February 2012      Published: 01 October 2012
PACS:  81.07.Lk (Nanocontacts)  
  81.16.Dn (Self-assembly)  
  85.35.Ds (Quantum interference devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/9/098102       OR      https://cpl.iphy.ac.cn/Y2012/V29/I9/098102
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FU Ying-Chun
WANG Xiao-Feng
FAN Zhong-Chao
YANG Xiang
BAI Yun-Xia
ZHANG Jia-Yong
MA Hui-Li
JI An
YANG Fu-Hua
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