Chin. Phys. Lett.  2012, Vol. 29 Issue (9): 097805    DOI: 10.1088/0256-307X/29/9/097805
CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
White Hybrid Light-Emitting Devices Based on the Emission of Thermal Annealed Ternary CdSe/ZnS Quantum Dots
QU Da-Long1,2, ZHANG Zhen-Song1, YUE Shou-Zhen1, WU Qing-Yang1, YAN Ping-Rui1, ZHAO Yi1**, LIU Shi-Yong1
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
2Jilin Teachers' Institute of Engineering and Technology, 3050 Kaixuan Street, Changchun 130012
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QU Da-Long, ZHANG Zhen-Song, YUE Shou-Zhen et al  2012 Chin. Phys. Lett. 29 097805
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Abstract We report on a white hybrid light-emitting device employing a mixture of ternary CdSe/ZnS quantum dots (QDs) as an emitting layer (EML) and a small molecular material tris(8-hydroxyquinoline) aluminum (Alq3) as an electron-transporting layer. The film morphology of the spin-coated mixture of QDs is strongly improved via thermal annealing, and therefore a close-packed QD-EML is realized between organic charge-transporting layers. As a result, compared to the device with an unannealed QD-EML, the emission of Alq3 is deeply suppressed. In addition, a maximum luminance of more than 1000 cd/m2 and a maximum luminous efficiency of 2.2 cd/A are achieved.
Received: 01 April 2012      Published: 01 October 2012
PACS:  78.60.Fi (Electroluminescence)  
  78.67.Hc (Quantum dots)  
  42.50.Ct (Quantum description of interaction of light and matter; related experiments)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/9/097805       OR      https://cpl.iphy.ac.cn/Y2012/V29/I9/097805
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QU Da-Long
ZHANG Zhen-Song
YUE Shou-Zhen
WU Qing-Yang
YAN Ping-Rui
ZHAO Yi
LIU Shi-Yong
[1] Murray C B, Norris D J and Bawendi M G 1993 J. Am. Chem. Soc. 115 8706
[2] Gao M, Richter B and Kirstein S 1997 Adv. Mater. 9 802
[3] Cheng G, Mazzeo M, Rizzo A, Li Y, Duan Y and Gigli G 2009 Appl. Phys. Lett. 94 243506
[4] Cheng G, Lu W, Chen Y and Che C M 2012 Opt. Lett. 37 1109
[5] Cheng G, Mazzeo M, D'Agostino S, Della Sala F, Carallo S and Gigli G 2010 Opt. Lett. 35 616
[6] Li Y, Rizzo A, Cingolani R and Gigli G 2006 Adv. Mater. 18 2545
[7] Anikeeva P O, Halpert J E, Bawendi M G and Bulovi? V 2007 Nano Lett. 7 2196
[8] Rizzo A et al 2008 Small 4 2143
[9] Rizzo A et al 2008 Adv. Mater. 20 1886
[10] Zhao J, Bardecker J A, Munro A M, Liu M S, Niu Y, Ding I K, Luo J, Chen B, Alex K, Jen Y and Ginger D S 2006 Nano Lett. 6 463
[11] Sun Q, Wang Y A, Li L S, Wang D, Zhu T, Xu J, Yang C and Li Y 2007 Nat. Photon. 1 717
[12] Cheng G, Mazzeo M, Carallo S, Wang H, Ma Y and Gigli G 2010 Appl. Phys. Lett. 97 103107
[13] Niu Y H, Munro A M, Cheng Y J, Tian Y, Liu M S, Zhao J, Bardecker J A, Plante I J L, Ginger D S and Jen A K Y 2007 Adv. Mater. 19 3371
[14] Coe-Sullivan S, Woo W K, Bawendi M G and Bulovi? V 2002 Nature 420 800
[15] Coe-Sullivan S, Woo W K, Steckel J S, Bawendi M G and Bulovi? V 2003 Org. Electron. 4 123
[16] Prozorov T and Gedanken A 1998 Adv. Mater. 10 532
[17] Reineke S, Lindner F, Schwartz G, Seidler N, Walzer K, Lüssem B and Leo K 2009 Nature 459 234
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