| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Electrical and Optical Characterization of n-GaN by High Energy Electron Irradiation |
| LIANG Li-Min, XIE Xin-Jian, HAO Qiu-Yan, TIAN Yuan, LIU Cai-Chi** |
| School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300130 |
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| Cite this article: |
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LIANG Li-Min, XIE Xin-Jian, HAO Qiu-Yan et al 2012 Chin. Phys. Lett. 29 097801 |
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Abstract The effect of high energy electron irradiation on the electrical and optical properties of n-GaN is studied. Hall and photoluminescence measurements are carried out on the samples irradiated with different doses. The results obtained from Hall measurements show that electron concentration and mobility are proportional to electron irradiation doses. The PL results show that the near-band-edge intensity and yellow luminescence intensity decrease continually with the increasing electron irradiation. However, it is found that the ratio of the yellow luminescence intensity to the near-band-edge intensity increases with the increasing of electron irradiation dose. To interpret this phenomenon, we propose two theoretical models based on the charge transport mechanism and rate equations, respectively, and they are in good agreement with the experimental observations.
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Received: 24 April 2012
Published: 01 October 2012
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| PACS: |
78.55.Cr
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(III-V semiconductors)
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72.20.-i
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(Conductivity phenomena in semiconductors and insulators)
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29.20.Ej
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(Linear accelerators)
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