| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Exchange Bias in Polycrystalline BiFe1-xMnxO3/Ni81Fe19 Bilayers |
| YUAN Xue-Yong1, XUE Xiao-Bo2, SI Li-Fang1, DU Jun2, XU Qing-Yu1,3** |
1Department of Physics, Southeast University, Nanjing 211189
2National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093
3Key Laboratory of MEMS of the Ministry of Education, Southeast University, Nanjing 210096 |
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| Cite this article: |
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YUAN Xue-Yong, XUE Xiao-Bo, SI Li-Fang et al 2012 Chin. Phys. Lett. 29 097701 |
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Abstract Polycrystalline BiFe1-xMnxO3 films with x up to 0.50 are prepared on LaNiO3 buffered surface oxidized Si substrates. The doped Mn is confirmed to be partially in a +4 valence state. A clear exchange bias effect is observed with a 3.6 nm Ni81Fe19 layer deposited on the top BiFe1-xMnxO3 layer, which decreases drastically with increasing Mn doping concentration and finally to zero when x is above 0.20. These results clearly demonstrate that the exchange bias field comes from the net spins due to the canted antiferromagnetic spin structure in polycrystalline BiFe1-xMnxO3 films, which transforms to a collinear antiferromagnetic spin structure when the Mn doping concentration is larger than 0.20.
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Received: 04 July 2012
Published: 01 October 2012
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| PACS: |
77.55.Nv
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(Multiferroic/magnetoelectric films)
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75.30.Et
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(Exchange and superexchange interactions)
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75.50.Ee
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(Antiferromagnetics)
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