| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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High Concentration InGaN/GaN Multi-Quantum Well Solar Cells with a Peak Open-Circuit Voltage of 2.45 V |
| ZHANG Dong-Yan1, 2, ZHENG Xin-He1**, LI Xue-Fei1, WU Yuan-Yuan1, WANG Jian-Feng1, YANG Hui1 |
1Key Laboratory of Nanodevices and Applications, Suzhou Institute of Nano-tech and Nano-bionics (SINANO), Chinese Academy of Sciences, Suzhou 215125
2Graduate University of Chinese Academy of Sciences, Beijing 100190 |
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| Cite this article: |
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ZHANG Dong-Yan, ZHENG Xin-He, LI Xue-Fei et al 2012 Chin. Phys. Lett. 29 068801 |
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Abstract We report InGaN/GaN multi-quantum well (MQW) solar cells with a comparatively high open-circuit voltage and good concentration properties. The open circuit voltage (Voc) keeps increasing logarithmically with concentration ratio until 60 suns. The peak Voc of InGaN/GaN MQW solar cells, which has a predominant peak wavelength of 456 nm from electroluminescence measurements, is found to be 2.45 V when the concentration ratio reaches 333×. Furthermore, the dependence of conversion efficiency and fill factor on concentration ratio are analyzed.
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| Keywords:
88.40.Jm
78.56.-a
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Received: 22 March 2012
Published: 31 May 2012
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| PACS: |
88.40.jm
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(Thin film III-V and II-VI based solar cells)
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78.56.-a
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(Photoconduction and photovoltaic effects)
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