| FUNDAMENTAL AREAS OF PHENOMENOLOGY(INCLUDING APPLICATIONS) |
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Characteristic Optimization of 1.3 μm High-Speed MQW InGaAsP-AlGaInAs Lasers |
| MAO Yi-Wei, WANG Yao, CHEN Yang-Hua, XUE Zheng-Qun, LIN Qi, DUAN Yan-Min, SU Hui** |
| Fujian Institute Of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002 |
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| Cite this article: |
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MAO Yi-Wei, WANG Yao, CHEN Yang-Hua et al 2012 Chin. Phys. Lett. 29 064204 |
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Abstract We investigate 1.3 μm multi quantum-well (MQW) lasers with InGaAsP (well) and InGaAlAs (barrier) on InP for high speed application, compared to the typical structures of InGaAsP (well)-InGaAsP (barrier)/InP and InGaAlAs (well)-InGaAlAs (barrier)/InP with the same quaternary in the well and barrier. We calculate the characteristics of band offset and gain of InGaAsP-AlGaInAs quantum wells (QWs). The advances of the new QW design are mainly rooted in the large ratio between conduction-band and valence-band offsets (ΔEc:ΔEv=7:1), higher than the typical value of 4:6 in InGaAsP-InGaAsP and 7:3 in InGaAlAs-InGaAlAs for 1.3 μm lasers. Due to the low confinement energy of holes, non-uniformity of carrier distribution over multi-InGaAsP-AlGaInAs QWs is significantly reduced. The enhancement of high-speed performance of InGaAsP-AlGaInAs MQW lasers is investigated in terms of turn-on oscillation.
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| Keywords:
42.55.Px
42.60.Fc
73.50.-h
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Received: 12 January 2012
Published: 31 May 2012
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| PACS: |
42.55.Px
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(Semiconductor lasers; laser diodes)
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42.60.Fc
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(Modulation, tuning, and mode locking)
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73.50.-h
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(Electronic transport phenomena in thin films)
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