| CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
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Effect of Annealing Temperature on the Structural and Electrical Properties of a−Axis-Oriented SrTiO3 Films |
| WANG Xiao-Fei1, 3**,HU Qiu-Bo2,LI Li-Ben1, 3,CHEN Qing-Dong1, 3,WANG Hui-Xian1, 3 |
1School of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003
2Department of Mathematics and Science, Luoyang Institute of Science and Technology, Luoyang 471023
3Luoyang Key Laboratory of Photonic and Electronic Materials, Luoyang 471003 |
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| Cite this article: |
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WANG Xiao-Fei, **, HU Qiu-Bo et al 2012 Chin. Phys. Lett. 29 056101 |
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Abstract Strontium titanate films with high a−axis-orientation [a(100)=94.1%] were deposited on (111) Pt/Ti/SiO2/Si substrates by the metal organic deposition process. X−ray diffraction shows that the degree of a-axis orientation increases with increasing annealing temperature. It is found that the dielectric properties are improved by a higher annealing temperature, while the leakage currents are also enhanced, and the possible causes of temperature dependence are discussed.
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| Keywords:
61.10.Nz
77.55.+f
68.55.Jk
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Received: 18 November 2011
Published: 30 April 2012
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| [1] Vendik O G 1976 Ferroelectrics 12 85[2] Van Keuls F W, Romanofsky R R, Bohman D Y, Winters M D, Miranda F A, Mueller C H, Treece R E, Rivkin T V and Galt D 1997 Appl. Phys. Lett. 71 3075[3] Seetawan T, Wong-ud-dee G, Thanachayanont C and Amornkitbumrung V 2010 Chin. Phys. Lett. 27 026501[4] Ramesh R, Inam A, Chan W K, Wilkens B, Remschning K, Hart D L and Tarascon J M 1991 Science 252 944[5] Warusawithana M P, Cen C, Sleasman C R, Woicik J C, Li Y L, Kourkoutis L F, Klug J A, Li H, Ryan P, Wang L P, Bedzyk M, Muller D A, Chen L Q, Levy J and Schlom D G 2009 Science 324 367[6] Yamada T, Petzelt J, Tagantsev A K, Denisov S, Noujni D, Petrov P K, Mackova A, Fujito K, Kiguchi T, Shinozaki K, Mizutani N, Sherman V O, Muralt P and Setter N 2006 Phys. Rev. Lett. 96 157602[7] Chang W, Kirchoefer S W, Bellotti J A, Qadri S B, Pond J M, Haeni J H and Schlom D G 2005 J. Appl. Phys. 98 024107[8] Haeni J H, Irvin P, Chang W, Uecker R, Reiche P, Li Y L, Choudhury S, Tian W, Hawley M E, Craigo B, Tagantsev A K, Pan X Q, Streiffer S K, Chen L Q, Kirchoefer S W, Levy J and Schlom D G 2004 Nature 430 758[9] Yu C, Scullin M L, Huijben M, Ramesh R and Majumdar A 2008 Appl. Phys. Lett. 92 191911[10] Hao J H, Luo Z and Gao J 2006 J. Appl. Phys. 100 114107[11] Kim H S, Bi L, Dionne G F and Ross C A 2008 Appl. Phys. Lett. 93 092506[12] Lu C J, Qiao Y, Qi Y J, Chen X Q and Zhu J S 2005 Appl. Phys. Lett. 87 222901[13] Hu G D 2006 J. Appl. Phys. 100 096109[14] Hu G D, Fan S H and Cheng X 2007 J. Appl. Phys. 101 054111[15] Yi H, Kim M G, Park J H and Jiang H M 2004 J. Appl. Phys. 96 5110[16] Zhu Z X, Ruangchalermwong C and Li J F 2008 J. Appl. Phys. 104 054107[17] Wang X F, Lu X M, Bo H F, Liu Y Y, ShenY C, Wu X B, Cai W, KanY, Zhang C, Liu Y F, Huang F Z and Zhu J S 2010 Solid State Commun. 150 1637[18] Rozier Y, Gautier B, Hyvert G, Descamps A, Plossu C, Dubourdieu C and Ducroquet F 2009 Thin Solid Films 517 1868[19] Bao D H, Yao X, Wakiya N, Shinozaki K and Mizutani N 2001 Appl. Phys. Lett. 79 3767[20] Kamalasanan M N, Kumar N D and Chandra S 1993 J. Appl. Phys. 74 679[21] Thomas R, Dube D C, Kamalasanan M N, Chandra S and Bhalla A S 1997 J. Appl. Phys. 82 4484[22] Li Y S, Ma Y and Zhou Y C 2009 Appl. Phys. Lett. 94 042903[23] Lu J W, Schmidt S, Ok Y W, Keane S P and Stemmer S 2005 J. Appl. Phys. 98 054101[24] Keane S P, Schmidt S, Lu J W, Romanov A E and Stemmer S 2006 J. Appl. Phys. 99 033521[25] Aygün S M, Daniels P, Borland W and Maria J P 2008 J. Appl. Phys. 103 084123[26] Song S N, Zhai J W and Yao X 2007 J. Cryst. Growth 308 223 |
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