| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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The Evolution of Defects in Deformed Cu-Ni-Si Alloys during Isochronal Annealing Studied by Positron Annihilation |
| QI Ning1, JIA Yan-Lin, LIU Hui-Qun, YI Dan-Qing2, CHEN Zhi-Quan1** |
1Hubei Nuclear Solid Physics Key Laboratory, Department of Physics, Wuhan University, Wuhan 430072
2School of Materials Science and Engineering, Central South University, Changsha 410083
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| Cite this article: |
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QI Ning, JIA Yan-Lin, LIU Hui-Qun et al 2012 Chin. Phys. Lett. 29 127803 |
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Abstract The effect of isochronal annealing on the deformation-induced defects in pure Cu and Cu-Ni-Si alloys is studied by positron annihilation spectroscopy. For the cold-rolled Cu, annealing up to 900°C causes a gradual recovery of the deformation-induced defects and monotonous decrease of the hardness. This indicates that its hardening is mainly related with defects such as dislocations. However, for the hot-rolled and quenched Cu-Ni-Si alloy, although there is a partial recovery of defects after annealing below 500°C, formation of additional defects is observed after annealing above 500°C. The hardness of Cu-Ni-Si alloy has a maximum value after annealing at 500°C, which suggests that the hardening of Cu-Ni-Si alloy is not due to defects, but primarily due to the precipitation formed during annealing. Further annealing of the Cu-Ni-Si alloy above 500°C results in over-aging effect and the precipitates lose coherence with the host matrix, which leads to positron trapping by vacancy clusters in the incoherent interface region.
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Received: 21 September 2012
Published: 04 March 2013
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