Onset for the Electron Velocity Overshoot in Indium Nitride

doi:10.1088/0256-307X/29/12/127201

Chin. Phys. Lett.

2012, Vol. 29

Issue (12): 127201 DOI: 10.1088/0256-307X/29/12/127201

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Onset for the Electron Velocity Overshoot in Indium Nitride

Clóves G. Rodrigues^**

Departamento de Matemática e Física, Pontifícia Universidade Católica de Goiás CP 86, 74605-010 Goiania, Goiás, Brazil

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Clóves G. Rodrigues 2012 Chin. Phys. Lett. 29 127201

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Abstract A theoretical study on the electron drift velocity and electron nonequilibrium temperature of indium nitride (InN) is presented. It is based on a nonlinear quantum kinetic theory which provides a description of the dissipative phenomena developing in the system. The ultrafast time evolution of the electron drift velocity and electron nonequilibrium temperature is obtained, and overshoot effects are evidenced on both of them. The overshoot onsets are shown to occur at 4 kV/cm, electric field intensity which is considerably smaller than those recently derived by resorting to Monte Carlo simulations.

Received: 13 January 2012 Published: 04 March 2013

PACS:	72.10.-d	(Theory of electronic transport; scattering mechanisms)
	78.55.Cr	(III-V semiconductors)
	05.70.Ln	(Nonequilibrium and irreversible thermodynamics)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127201 OR https://cpl.iphy.ac.cn/Y2012/V29/I12/127201

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[1] Piprek J 2007 Nitride Semiconductor Devices: Principles and Simulation (New York: Wiley)
[2] Takahashi K, Yoshikawa A and Sandhu A 2006 Wide Bandgap Semiconductors (Berlin: Springer)
[3] Morko? H 2008 Handbook of Nitride Semiconductors and Devices (New York: Wiley)
[4] Rodrigues C G et al R 2010 Braz. J. Phys. 40 63
[5] Wu J et al 2003 J. Appl. Phys. 94 4457
[6] Ishitani Y et al 2005 Phys. Status Solidi C 2 2276
[7] Davydov V Y et al 2002 Phys. Status Solidi B 230 R4
[8] Matsuoka T et al 2002 Appl. Phys. Lett. 81 1246
[9] Wu J et al 2002 Appl. Phys. Lett. 80 3967
[10] Chen Q et al 1998 IEEE Electron Device Lett. 19 44
[11] Bellotti E et al 1999 J. Appl. Phys. 85 916
[12] O'Leary S K et al 2003 J. Electron. Mater. 32 327
[13] O'Leary S K et al 2006 J. Mater Sci: Mater. Electron. 17 87
[14] O'LearyS K et al 2006 Appl. Phys. Lett. 88 152113
[15] O'Leary S K et al 2005 Appl. Phys. Lett. 87 222103
[16] Tansley T L and Foley C P 1986 J. Appl. Phys. 59 3241
[17] Yeo Y C et al 1998 J. Appl. Phys. 83 1429
[18] Rodrigues C G 2007 J. Mater. Sci. 42 396
Rodrigues C G 2006 Chin. J. Phys. 44 44
[19] Rodrigues C G et al 2000 Transport Theor. Stat. Phys. 29 733
[20] Zubarev D N, Morosov V and R?pke G 1997 Statistical Mechanics of Nonequilibrium Processes vols 1 and 2 (Berlin: Akademie)
[21] Peletminskii S V and Yatsenko A A 1968 J. Exp. Theor. Phys. 26 773
[22] Zubarev D N 1974 Nonequilibrium Statistical Thermodynamics (New York: Plenum-Consultants Bureau)
[23] Zubarev D N 1970 Fortschr. Phys./Prog. Phys. 18 125
[24] Zubarev D N 1981 J. Soviet Math. 16 1509
[25] Akhiezer A I and Peletminskii S V 1981 Methods of Statistical Physics (Oxford: Pergamon)
[26] Luzzi R et al 2002 Predictive Statistical Mechanics: A Nonequilibrium Statistical Ensemble Formalism (Dordrecht: Kluwer Academic)
[27] Luzzi R et al 1990 Fortschr. Phys./Prog. Phys. 38 887
[28] Luzzi R et al 2000 Statistical Foundations of Irreversible Thermodynamics (Stuttgart: Teubner-BertelsmannSpringer)
[29] Rodrigues C G et al 2001 J. Appl. Phys. 90 1879
Rodrigues C G et al 2004 J. Appl. Phys. 95 4914
[30] Rodrigues C G et al 2005 J. Phys. D: Appl. Phys. 38 3584
Rodrigues C G et al 2006 Solid State Commun. 140 135
[31] Rodrigues C G 2006 Microelectron. J. 37 657
[32] Algarte A C et al 1992 Phys. Status Solidi B 173 487
[33] Rodrigues C G et al 1999 Phys. Status Solidi B 216 35
[34] Casas-Vasquez J and Jou D 2003 Rep. Prog. Phys. 66 1937
[35] Fr?hlich H, Pelzer H and Zienau S 1950 Phil. Mag. 41 221
[36] Ehrenreich H 1957 J. Phys. Chem. Solids 2 131
[37] Haga E and Kimura H 1963 J. Phys. Soc. Jpn. 18 777
[38] Ehrenreich H 1960 Phys. Rev. 120 1951
[39] Callen H 1949 Phys. Rev. 76 1394
[40] Conwell E M 1967 High-field Transport in Semiconductors in Solid State Physics Series Suppl. 9 (New York: Academic)
[41] Hutson A R 1961 J. Appl. Phys. 32 2287(supplement)
[42] Vogl P 1981 Physics of Nonlinear Transport in Semiconductors (New York: Plenum)
[43] Ridley B K 1977 J. Phys. C: Solid State Phys. 10 1589
[44] Harrison W A 1956 Phys. Rev. 104 1281
[45] Tsen K T et al 2005 Appl. Phys. Lett. 86 222103
[46] Zanato D et al J 2004 Semicond. Sci. Technol. 19 1024
[47] Masyukov N A et al 2011 J. Appl. Phys. 109 23706
[48] Rodrigues C G et al 2007 J. Phys.: Condens. Matter 19 346214

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