| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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A New Method to Calculate the Rashba Spin Splitting in III-Nitride Heterostructures |
| LI Ming**, SUN Gang, FAN Li-Bo |
College of Electrical and Information Engineering, Xuchang University, Xuchang 461000
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| Cite this article: |
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LI Ming, SUN Gang, FAN Li-Bo 2012 Chin. Phys. Lett. 29 127104 |
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Abstract By constructing proper basis functions, the Kane Hamiltonian is transformed to two separate Hamiltonians, and the Schr?dinger equation for conduction-band envelope functions can be obtained by eliminating the valence band components of the envelope functions. Then we decouple the up-spin and down-spin states and derive the expression for the Rashba coefficient and single-particle energy, considering the spin-orbit coupling and the nonparabolicity corrections. Finally, we calculate the Rashba spin splitting for AlxGa1?xN/GaN heterostructures by using the variational method. The Rashba spin splitting calculated here is of the same order of magnitude as in other III–V materials, showing that the internal electric field caused by the high concentration of the 2DEG is crucial for considerable Rashba spin splitting
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Received: 19 July 2012
Published: 04 March 2013
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| PACS: |
71.70.-d
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(Level splitting and interactions)
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73.21.-b
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(Electron states and collective excitations in multilayers, quantum wells, mesoscopic, and nanoscale systems)
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78.30.Fs
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(III-V and II-VI semiconductors)
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