Influence of Oxygen Partial Pressure on the Fermi Level of ZnO Films Investigated by Kelvin Probe Force Microscopy

doi:10.1088/0256-307X/29/12/127102

Chin. Phys. Lett.

2012, Vol. 29

Issue (12): 127102 DOI: 10.1088/0256-307X/29/12/127102

CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES

Influence of Oxygen Partial Pressure on the Fermi Level of ZnO Films Investigated by Kelvin Probe Force Microscopy

SU Ting^1**, ZHANG Hai-Feng²

¹Department of Mechanical Engineering, National University of Singapore, 9 Engineering Drive 1, Singapore 117576
²Department of Physics, Jiamusi University, Jiamusi 154007

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SU Ting, ZHANG Hai-Feng 2012 Chin. Phys. Lett. 29 127102

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Abstract The influence of oxygen partial pressure on the Fermi level of ZnO films prepared by pulsed laser deposition is investigated. The contact potential difference of the ZnO films fabricated under various oxygen partial pressures is studied systematically using Kelvin probe force microscopy. The Fermi level shifted by 0.35 eV as oxygen partial pressure increased. This indicates a significant change in the electronic structure and energy balance in ZnO films. This fact provides a consistent explanation that the changes in carrier concentration, resistivity and mobility of ZnO films are attributed to oxygen vacancy induced shift of the Fermi level.

Received: 13 August 2012 Published: 04 March 2013

PACS:

71.20.Nr

(Semiconductor compounds)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/29/12/127102 OR https://cpl.iphy.ac.cn/Y2012/V29/I12/127102

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	SU Ting
	ZHANG Hai-Feng

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