CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Photo-Induced Spin Dynamics in Nanoelectronic Devices |
Mina D. Asham1**, Walid A. Zein2, Adel H. Phillips2** |
1Faculty of Engineering, Benha University, Benha, Egypt 2Faculty of Engineering, Ain-Shams University, Cairo, Egypt
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Cite this article: |
Mina D. Asham, Walid A. Zein, Adel H. Phillips 2012 Chin. Phys. Lett. 29 108502 |
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Abstract The present research is devoted to the investigation of electron spin transmission through a nanoelectronic device. This device is modeled as nonmagnetic semiconductor quantum dot coupled to two diluted magnetic semiconductor leads. The spin transport characteristics through such a device are investigated under the effect of an ac-field of a wide range of frequencies. The present result shows a periodic oscillation of the conductance for both the cases of parallel and antiparallel spin alignment. These oscillations are due to Fano-resonance. Results for spin polarization and giant magneto-resistance show the coherency property. The present research might be useful for developing single spin-based quantum bits (qubits) required for quantum information processing and quantum spin-telecommunication.
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Received: 20 February 2012
Published: 01 October 2012
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PACS: |
85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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85.75.Hh
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(Spin polarized field effect transistors)
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85.35.Be
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(Quantum well devices (quantum dots, quantum wires, etc.))
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