| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Properties of p-NiO/n-GaN Diodes Fabricated by Magnetron Sputtering |
| WANG Hui1,2, ZHANG Bao-Lin1, WU Guo-Guang1, WU Chao1, SHI Zhi-Feng1, ZHAO Yang1, WANG Jin1, MA Yan1, DU Guo-Tong 1, DONG Xin1** |
1State Key Laboratory on Integrated Optoelectronics, College of Electronic Science and Engineering, Jilin University, Changchun 130012
2College of Physics and Engineering, Henan University of Science and Technology, Luoyang 471003
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| Cite this article: |
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WANG Hui, ZHANG Bao-Lin, WU Guo-Guang et al 2012 Chin. Phys. Lett. 29 107304 |
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Abstract The p-NiO thin film is prepared by radio frequency magnetron sputtering on the n-GaN/sapphire substrate to form p-NiO/n-GaN heterojunction diodes. The structural, optical and electrical properties of the p-NiO thin film are investigated. The results indicate that the NiO film has good crystal qualities and stable p-type conductivities. The current-voltage measurement of the p-NiO/n-GaN diode exhibits typical rectifying behaviour with a turn-on voltage of about 2.2 V. Under forward bias, a prominent ultraviolet emission centered at 375 nm is observed at room temperature. Furthermore, the mechanism of the light emission is discussed in terms of the band diagrams of the heterojunction in detail.
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Received: 10 July 2012
Published: 01 October 2012
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| PACS: |
73.20.At
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(Surface states, band structure, electron density of states)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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