| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Spin-Selective Transport of Electron in a Quantum Dot under Magnetic Field |
| LI Bo-Xin1, ZHENG Jun2, CHI Feng3 |
1College of New Energy, Bohai University, Jinzhou 121013
2SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083
3College of Engineering, Bohai University, Jinzhou 121013
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| Cite this article: |
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LI Bo-Xin, ZHENG Jun, CHI Feng 2012 Chin. Phys. Lett. 29 107302 |
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Abstract We study electronic spin-polarised transport in a system composed of a quantum dot (QD) connected to one normal metal electrode and one ferromagnetic one. The electrical current of each spin component and the spin accumulation on the QD are calculated by using the nonequilibrium Green's function method. We find that in the Coulomb blockade regime, the current spin polarisation can reach 100% under a strong magnetic field. Meanwhile, the spin accumulation on the QD approaches to unit, and thus the dot is occupied by electrons of one certain spin orientation. The system can operate as a spin injector from a normal metal reservoir to a semiconductor material, and may find real usage in solid state quantum information processes.
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Received: 29 May 2012
Published: 01 October 2012
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| PACS: |
73.23.-b
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(Electronic transport in mesoscopic systems)
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72.25.-b
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(Spin polarized transport)
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73.40.Gk
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(Tunneling)
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85.75.-d
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(Magnetoelectronics; spintronics: devices exploiting spin polarized transport or integrated magnetic fields)
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