CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Dipolar and Quadrupolar Modes of SiO2/Au Nanoshell Enhanced Light Trapping in Thin Film Solar Cells |
BAI Yi-Ming1**, WANG Jun2, CHEN Nuo-Fu1,3, YAO Jian-Xi1, ZHANG Xing-Wang3, YIN Zhi-Gang3, ZHANG Han3, HUANG Tian-Mao3
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1School of Renewable Energy Engineering, North China Electric Power University, Beijing 102206
2National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
3Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, PO Box 912, Beijing 100083
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Cite this article: |
BAI Yi-Ming, WANG Jun, CHEN Nuo-Fu et al 2011 Chin. Phys. Lett. 28 087306 |
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Abstract Dipolar and quadrupolar resonance wavelengths of SiO2/Au nanoshell surface plasmons are designed at 560 nm to enhance the light trapping in thin film solar cells. In order to quantitatively describe the light trapping effect, the forward−scattering efficiency (FSE) and the light trapping efficiency (LTE) are proposed by considering the light scattering direction of SiO2/Au nanoshells. Based on the Mie theory, the FSE and the LTE are calculated for SiO2/Au nanoshells of different dimensions, and the contributions of the dipolar and quadrupolar modes to the light trapping effect are analyzed in detail. When the surface coverage of nanoshells is 5%, the LTEs are 21.7% and 46.9% for SiO2/Au nanoshells with sizes of (31 nm, 69 nm) and (53 nm, 141 nm), respectively. The results indicate that the SiO2/Au nanoshell whose quadrupolar mode peak is designed to the strongest solar energy flux density of the solar spectrum facilitates the further enhancement of light harvesting in thin film solar cells.
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Keywords:
73.20.Mf
42.25.Fx
84.60.Jt
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Received: 03 September 2010
Published: 28 July 2011
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PACS: |
73.20.Mf
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(Collective excitations (including excitons, polarons, plasmons and other charge-density excitations))
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42.25.Fx
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(Diffraction and scattering)
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84.60.Jt
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(Photoelectric conversion)
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