| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Influence of Fluorine on the Conductivity and Oxidation of Silicon Nanomembranes after Hydrofluoric Acid Treatment |
| ZHAO Xiang-Fu**, HAN Ping, ZHANG Rong, ZHENG You-Dou
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School of Electronic Science and Engineering, Jiangsu Provincial Key Laboratory of Advanced Photonic and Electronic Materials, National Laboratory of Solid State Microstructure, Nanjing University, Nanjing 210093
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ZHAO Xiang-Fu, HAN Ping, ZHANG Rong et al 2011 Chin. Phys. Lett. 28 087305 |
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Abstract After immersion in hydrofluoric acid, the sheet resistance of a 220-nm-thick silicon nanomembrane, measured in dry air by van der Pauw method, drops around two orders of magnitude initially, then increases and reaches the level of a sample with a native oxide surface in about one month. The surface component and oxidation rate are also characterized by x-ray photo electronic spectroscopy measurement. Fluorine is found to play a significant role in improving conductivity and has no apparent influence on the oxidation rate after hydrofluoric acid treatment.
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| Keywords:
73.25.+i
73.40.Ty
73.61.Cw
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Received: 16 April 2011
Published: 28 July 2011
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| PACS: |
73.25.+i
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(Surface conductivity and carrier phenomena)
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73.40.Ty
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(Semiconductor-insulator-semiconductor structures)
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73.61.Cw
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(Elemental semiconductors)
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