| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Leakage Current and Photovoltaic Properties in a Bi2Fe4O9/Si Heterostructure |
| JIN Ke-Xin**, LUO Bing-Cheng, ZHAO Sheng-Gui, WANG Jian-Yuan, CHEN Chang-Le
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Shaanxi Key Laboratory of Condensed Matter Structures and Properties, School of Science, Northwestern Polytechnical University, Xi'an 710072
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| Cite this article: |
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JIN Ke-Xin, LUO Bing-Cheng, ZHAO Sheng-Gui et al 2011 Chin. Phys. Lett. 28 087301 |
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Abstract A heterostructure composed of a Bi2Fe4O9 film and an n−type Si substrate is fabricated. The characteristics of leakage current density versus electric field are investigated and the leakage current density is about 6×10−6 A/cm2 at an electric field of 200 kV/cm at 300 K. A strong photovoltaic effect is observed when the heterostructure is exposed to a laser pulse with a wavelength of 532 nm and a power of 6 mW/mm2. It is found that the peak photovoltages initially increase with decreasing temperature, followed by a decrease at T<210 K. These results reveal that the heterostructure is a promising candidate for photovoltaic devices that are compatible with Si integrated circuits.
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| Keywords:
73.40.Lq
73.50.Pz
77.55.Nv
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Received: 09 April 2011
Published: 28 July 2011
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| PACS: |
73.40.Lq
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(Other semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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73.50.Pz
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(Photoconduction and photovoltaic effects)
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77.55.Nv
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(Multiferroic/magnetoelectric films)
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