Chin. Phys. Lett.  2011, Vol. 28 Issue (8): 086803    DOI: 10.1088/0256-307X/28/8/086803
CONDENSED MATTER: STRUCTURE, MECHANICAL AND THERMAL PROPERTIES |
Electrical, Structural and Interfacial Characterization of HfO2 Films on Si Substrates
TAN Ting-Ting**, LIU Zheng-Tang, LI Yan-Yan
State Key Laboratory of Solidification Processing, College of Materials Science and Engineering, Northwestern Polytechnical University, Xi'an 710072
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TAN Ting-Ting, LIU Zheng-Tang, LI Yan-Yan 2011 Chin. Phys. Lett. 28 086803
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Abstract Hafnium oxide films are deposited on Si (100) substrates by means of rf magnetron sputtering. The interfacial structure is studied using high-resolution transmission electron microscopy (HRTEM) and x-ray photoelectron spectroscopy (XPS), and the electrical properties of the Au/ HfO2/Si stack are analyzed by frequency−dependent capacitance-voltage (CVf) measurements. The amorphous interfacial layer between HfO2 and the Si substrate is observed by the HRTEM method. From the results of XPS, the interfacial layer comprises hafnium silicate and silicon oxide. For CVf measurements, the CV plots show a peak at a low frequency and the change in frequency has effects on the intensity of the peak. As expected, rapid thermal annealing can passivate the interface states of the HfO2/Si stack.
Keywords: 68.35.Ct      73.61.Ng      77.55.D-     
Received: 24 May 2011      Published: 28 July 2011
PACS:  68.35.Ct (Interface structure and roughness)  
  73.61.Ng (Insulators)  
  77.55.D-  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/8/086803       OR      https://cpl.iphy.ac.cn/Y2011/V28/I8/086803
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TAN Ting-Ting
LIU Zheng-Tang
LI Yan-Yan
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