Chin. Phys. Lett.  2011, Vol. 28 Issue (7): 078504    DOI: 10.1088/0256-307X/28/7/078504
CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
Significant Improvement of Organic Thin-Film Transistor Mobility Utilizing an Organic Heterojunction Buffer Layer
PAN Feng1,2, QIAN Xian-Rui1,2, HUANG Li-Zhen1,2, WANG Hai-Bo1, YAN Dong-Hang1**
1 State Key Laboratory of Polymer Chemistry and Physics, Changchun Institute of Applied Chemistry, Chinese Academy of Sciences, Changchun 130022
2 Graduate School of Chinese Academy of Sciences, Beijing 100039
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PAN Feng, QIAN Xian-Rui, HUANG Li-Zhen et al  2011 Chin. Phys. Lett. 28 078504
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Abstract High-mobility vanadyl phthalocyanine (VOPc)/5,5"'−bis(4-fluorophenyl)-2,2':5',2":5",2"'−quaterthiophene (F2-P4T) thin-film transistors are demonstrated by employing a copper hexadecafluorophthalocyanine (F16CuPc)/copper phthalocyanine (CuPc) heterojunction unit, which are fabricated at different substrate temperatures, as a buffer layer. The highest mobility of 4.08 cm2/Vs is achieved using a F16CuPc/CuPc organic heterojunction buffer layer fabricated at high substrate temperature. Compared with the random small grain-like morphology of the room-temperature buffer layer, the high-temperature organic heterojunction presents a large-sized fiber-like film morphology, resulting in an enhanced conductivity. Thus the contact resistance of the transistor is significantly reduced and an obvious improvement in device mobility is obtained.
Keywords: 85.30.De      81.05.Fb      85.30.Tv     
Received: 14 April 2011      Published: 29 June 2011
PACS:  85.30.De (Semiconductor-device characterization, design, and modeling)  
  81.05.Fb (Organic semiconductors)  
  85.30.Tv (Field effect devices)  
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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/7/078504       OR      https://cpl.iphy.ac.cn/Y2011/V28/I7/078504
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PAN Feng
QIAN Xian-Rui
HUANG Li-Zhen
WANG Hai-Bo
YAN Dong-Hang
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