| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Demonstration of a High Open-Circuit Voltage GaN Betavoltaic Microbattery |
| CHENG Zai-Jun1, SAN Hai-Sheng1**, CHEN Xu-Yuan1,2**, LIU Bo3, FENG Zhi-Hong3
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1 Pen-Tung Sah Micro-Nano Technology Research Center, Xiamen University, Xiamen 361005
2 Faculty of Science and Engineering, Vestfold University College, P.O. Box 2243, N-3103, Tønsberg, Norway
3 Science and Technology on ASIC Laboratory, Hebei Semiconductor Research Institute, Shijiazhuang 050051
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| Cite this article: |
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CHENG Zai-Jun, SAN Hai-Sheng, CHEN Xu-Yuan et al 2011 Chin. Phys. Lett. 28 078401 |
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Abstract A high open-circuit voltage betavoltaic microbattery based on a GaN p-i-n diode is demonstrated. Under the irradiation of a 4×4 mm2 planar solid 63Ni source with an activity of 2 mCi, the open−circuit voltage Voc of the fabricated single 2×2 mm2 cell reaches as high as 1.62 V, the short−circuit current density Jsc is measured to be 16nA/cm2. The microbattery has a fill factor of 55%, and the energy conversion efficiency of beta radiation into electricity reaches to 1.13%. The results suggest that GaN is a highly promising potential candidate for long-life betavoltaic microbatteries used as power supplies for microelectromechanical system devices.
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| Keywords:
84.90.+a
81.15.Gh
73.40.Kp
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Received: 07 May 2011
Published: 29 June 2011
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| PACS: |
84.90.+a
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(Other topics in electronics, radiowave and microwave technology, and direct energy conversion and storage)
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81.15.Gh
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(Chemical vapor deposition (including plasma-enhanced CVD, MOCVD, ALD, etc.))
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73.40.Kp
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(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
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