| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Peripheral Ferroelectric Domain Switching and Polarization Fatigue in Nonvolatile Memory Elements of Continuous Pt/SrBi2Ta2O9/Pt Thin-Film Capacitors |
| CHEN Min-Chuan, JIANG An-Quan**
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| State Key Laboratory of ASIC & System, Department of Microelectronics, Fudan University, Shanghai 200433 |
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| Cite this article: |
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CHEN Min-Chuan, JIANG An-Quan 2011 Chin. Phys. Lett. 28 077701 |
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Abstract We verify the domain sideway motion around the peripheral regions of the crossed capacitors of top and bottom electrode bars without electrode coverage. To avoid the crosstalk problem between adjacent memory cells, the safe distance between adjacent elements of Pt/SrBi2Ta2O9/Pt thin−film capacitors is estimated to be 0.156 µm. Moreover, the fatigue of Pt/SrBi2Ta2O9/Pt thin-film capacitors is independent of the individual memory size due to the absence of etching damage.
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| Keywords:
77.80.Dj
81.20.Fw
84.32.Tt
85.50.Gk
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Received: 20 January 2011
Published: 29 June 2011
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