| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Enhancement-Mode AlGaN/GaN High Electron Mobility Transistors Using a Nano-Channel Array Structure |
| LIU Sheng-Hou1,2, CAI Yong1**, GONG Ru-Min2, WANG Jin-Yan2, ZENG Chun-Hong1, SHI Wen-Hua1, FENG Zhi-Hong3, WANG Jing-Jing3, YIN Jia-Yun3, Cheng P. Wen2, QIN Hua4, ZHANG Bao-Shun1
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1Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125
2Institute of Microelectronics, Peking University, Beijing 100871
3Science and Technology on ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051
4Key Laboratory of Nanodevice and Application, Suzhou Institute of Nano-tech and Nano-bionics, Chinese Academy of Sciences, Suzhou 215125
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| Cite this article: |
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LIU Sheng-Hou, CAI Yong, GONG Ru-Min et al 2011 Chin. Phys. Lett. 28 077202 |
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Abstract A nano-channel array (NCA) structure is applied to realize enhancement-mode (E-mode) AlGaN/GaN high-electron mobility transistors (HEMTs). The fabricated NCA-HEMT, consisting of 1000 channels connected in parallel with a channel width of 64 nm, shows a threshold voltage of 0.15 V and a subthreshold slope of 78 mV/dec, compared to −3.92 V and 99 mV/dec for a conventional HEMT (C-HEMT), respectively. Both the NCA-HEMT and C-HEMT show similar gate leakage current, indicating no significant degradation in gate leakage characteristics for the NCA-HEMT. The surrounding-field effect and relieved polarization contribute to the very large positive threshold voltage shift, while the work function difference makes it positive.
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| Keywords:
72.80.Ey
85.30.Tv
85.30.De
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Received: 25 March 2011
Published: 29 June 2011
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| PACS: |
72.80.Ey
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(III-V and II-VI semiconductors)
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85.30.Tv
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(Field effect devices)
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85.30.De
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(Semiconductor-device characterization, design, and modeling)
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