| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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CMOS Compatible Nonvolatile Memory Devices Based on SiO2/Cu/SiO2 Multilayer Films |
| WANG Yan1,2, LIU Qi2, LV Hang-Bing2, LONG Shi-Bing2, ZHANG Sen2, LI Ying-Tao1,2, LIAN Wen-Tai2, YANG Jian-Hong1**, LIU Ming2
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1 College of Physical Science and Technology, Lanzhou University, Lanzhou 730000
2 Laboratory of Nano-Fabrication and Novel Devices Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029
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WANG Yan, LIU Qi, LV Hang-Bing et al 2011 Chin. Phys. Lett. 28 077201 |
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Abstract We systematically investigate the resistive switching characteristics of SiO2 films with a Cu/SiO2/Cu/SiO2/Pt multilayer structure. The device exhibits good resistive switching performances, including a high ON/OFF resistance ratio (>103), good retention characteristic (>104s), satisfactory switching endurance (>200 cycles), a fast programming speed (<100 ns) and a high device yield (∼100%). Considering these results, SiO2-based memories have highly promising applications for nonvolatile memory devices.
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| Keywords:
72.80.Ga
73.61.Ng
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Received: 23 March 2011
Published: 29 June 2011
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