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Enhanced Total Ionizing Dose Susceptibility in Narrow Channel Devices |
| LIU Zhang-Li1,2**, HU Zhi-Yuan1,2, ZHANG Zheng-Xuan1, SHAO Hua, NING Bing-Xu1,2, BI Da-Wei1, CHEN Ming1,2, ZOU Shi-Chang1
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1The State Key Laboratory of Functional Materials for Informatics, Shanghai Institute of Microsystem and Information Technology, Chinese Academy of Sciences, Shanghai 200050
2Graduate University of the Chinese Academy of Sciences, Beijing 100049
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| Cite this article: |
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LIU Zhang-Li, HU Zhi-Yuan, ZHANG Zheng-Xuan et al 2011 Chin. Phys. Lett. 28 070701 |
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Abstract Total ionizing dose effects of different transistor sizes in a 0.18 µm technology are studied by 60Co γ-ray irradiation. Significant threshold voltage shift is observed for the narrow channel devices, which is called the radiation induced narrow channel effect (RINCE). A charge sharing model is introduced to understand the phenomenon. The devices' characteristic degradations after irradiation, such as threshold voltage shift, increase in on-state current under different drain biases and substrate biases, are discussed in detail. Radiation induced oxide trapped charge at the edges of shallow trench isolation plays an important role in the RINCE. Narrow channel devices are susceptible to the total ionizing dose effect.
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07.87.+V
85.30.-z
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Received: 18 March 2011
Published: 29 June 2011
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| PACS: |
07.87.+v
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(Spaceborne and space research instruments, apparatus, and components (satellites, space vehicles, etc.))
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85.30.-z
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(Semiconductor devices)
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