| CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY |
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Epitaxy of an Al-Droplet-Free AlN Layer with Step-Flow Features by Molecular Beam Epitaxy |
| PAN Jian-Hai, WANG Xin-Qiang**, CHEN Guang, LIU Shi-Tao, FENG Li, XU Fu-Jun, TANG Ning, SHEN Bo***
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State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University, Beijing 100871
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| Cite this article: |
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PAN Jian-Hai, WANG Xin-Qiang, CHEN Guang et al 2011 Chin. Phys. Lett. 28 068102 |
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Abstract We investigate epitaxy of AlN layers on sapphire substrates by molecular beam epitaxy. It is found that an atomically flat surface can be obtained under Al-rich conditions at growth temperature of 780 °C. However, the growth window to obtain an Al−droplet-free surface is too narrow to be well-controlled. However, the growth window can be greatly broadened by increasing the growth temperature up to 950 °C, where an Al-droplet-free surface with a step-flow feature is obtained due to the enhanced re-evaporization rate and migration ability of Al adatoms. The samples grown at the higher temperature also show a higher crystalline quality than those grown at lower temperatures.
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| Keywords:
81.05.Ea
81.15.Hi
68.37.Ps
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Received: 01 January 1900
Published: 29 May 2011
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| PACS: |
81.05.Ea
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(III-V semiconductors)
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81.15.Hi
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(Molecular, atomic, ion, and chemical beam epitaxy)
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68.37.Ps
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(Atomic force microscopy (AFM))
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