| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Subband Light Emission from Phosphorous-Doped Amorphous Si/SiO2 Multilayers at Room Temperature |
| SUN Hong-Cheng, XU Jun**, LIU Yu, MU Wei-Wei, XU Wei, LI Wei, CHEN Kun-Ji
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Nanjing National Laboratory of Microstructures, Key Laboratory of Advanced Photonic and Electronic Materials, School of Electronic Science and Engineering, Nanjing University, Nanjing 210093
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SUN Hong-Cheng, XU Jun, LIU Yu et al 2011 Chin. Phys. Lett. 28 067802 |
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Abstract Phosphorous-doped hydrogenated amorphous Si/SiO2 multilayer structures are fabricated in a plasma enhanced chemical vapor deposition system. The microstructural and luminescence properties of the samples are characterized after annealing at various temperatures. Under the onset crystallization temperature 800–900 °C, a strong subband infrared light emission in the range 1.1–1.8 μm is observed at room temperature instead of the usually observed visible light emission. This subband infrared emission is gradually enhanced with the increase of phosphorus doping concentration, which can be ascribed to the increase of the luminescent defect states promoted by the doped phosphorous atoms.
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| Keywords:
78.55.Qr
73.20.Hb
73.21.Ac
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Received: 12 February 2011
Published: 29 May 2011
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| PACS: |
78.55.Qr
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(Amorphous materials; glasses and other disordered solids)
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73.20.Hb
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(Impurity and defect levels; energy states of adsorbed species)
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73.21.Ac
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(Multilayers)
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