CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Strain Effects of the Structural Characteristics of Ferroelectric Transition in Single-Domain Epitaxial BiFeO3 Films |
LIU Yang**, PENG Xing-Ping
|
The Key Laboratory for Magnetism and Magnetic Materials of the Ministry of Education, Lanzhou University, Lanzhou 730000
|
|
Cite this article: |
LIU Yang, PENG Xing-Ping 2011 Chin. Phys. Lett. 28 067702 |
|
|
Abstract Structural characteristics of phase transition in single-domain epitaxial BiFeO3 films are studied by the Landau–Devonshire theory. It is predicted that remanent polarization shows strong strain dependence for different temperatures while spontaneous polarization is almost independent of strain over a wide temperature (0–500 °C). We also obtain the thickness dependence of the c−axis lattice parameter and Curie temperature, and make a comparison between the polarization rotation angle and the angle attributed to the structural evolution in epitaxial (001)p BiFeO3 films grown on SrTiO3 substrates. The theoretical results are in agreement with recent experimental and theoretical data. Our calculations show that the clamping effect should also be taken into account in order to depict the mechanism of the polarization rotation completely.
|
Keywords:
77.55.Nv
77.80.B-
61.50.Ah
|
|
Received: 26 September 2010
Published: 29 May 2011
|
|
PACS: |
77.55.Nv
|
(Multiferroic/magnetoelectric films)
|
|
77.80.B-
|
(Phase transitions and Curie point)
|
|
61.50.Ah
|
(Theory of crystal structure, crystal symmetry; calculations and modeling)
|
|
|
|
|
[1] Wang X Y, Wang Y L and Yang R J 2009 Appl. Phys. Lett. 95 142910
[2] Wang K F, Liu J -M and Ren Z F 2009 Adv. Phys. 58(4) 321
[3] Wang J, Neaton J B, Zheng H, Nagarajan V, Ogale S B, Liu B, Viehland D, Vaithyanathan V, Schlom D G, Waghmare U V, Spaldin N A, Rabe K M, Wuttig M and Ramesh R 2003 Science 299 1719
[4] Béa H, Dupé B, Fusil S, Mattana R, Jacquet E, Warot-Fonrose B, Wilhelm F, Rogale A, Petit S, Cros V, Anane A, Petroff F, Bouzehouane K, Geneste G, Dkhil B, Lisenkov S, Ponomareva I, Bellaiche L, Bibes M and Barthélémy A 2009 Phys. Rev. Lett. 102 217603
[5] Lebeugle D, Colson D, Forget A, Viret M, Bataille A M and Gukasov A 2008 Phys. Rev. Lett. 100 227602
[6] Catalan G and Scott J F 2009 Adv. Mater. 21 2463
[7] Roginska Y E, Tomashpo Y Y, Venevtse Y N, Petrov V M and Zhdanov G S 1966 Sov. Phys. JETP 23 47
[8] Kubel F and Schmid H 1990 Acta Crystallogr, Sect. B: Struct. Sci. 46 698
[9] Kim D H, Lee H N, Biegalski M D and Christen H M 2008 Appl. Phys. Lett. 92 012911
[10] Jang H W, Baek S H, Ortiz D, Folkman C M, Das R R, Chu Y H, Shafer P, Zhang J X, Choudhury S, Vaithyanathan V, Chen Y B, Felker D A, Biegalski M D, Rzchowski M S, Pan X Q, Schlom D G, Chen L Q, Ramesh R, Vaithyanathan V, and Eom C B 2008 Phys. Rev. Lett. 101 107602
[11] Jang H W, Baek S H, Ortiz D, Folkman C M, Eom C B, Chu Y H, Shafer P, Ramesh R, Vaithyanathan V and Schlom D G 2008 Appl. Phys. Lett. 92 062910
[12] Zeches R J, Rossell M D, Zhang J X, Hatt A J, He Q, Yang C -H, Kumar A, Wang C H, Melville A, Adamo C, Sheng G, Chu Y -H, Ihlefeld J F, Erni R, Ederer C, Gopalan V, Chen L Q, Schlom D G, Spaldin N A, Martin L W and Ramesh R 2009 Science 326 977
[13] Ma H, Chen L, Wang J, Ma J and Boey F 2008 Appl. Phys. Lett. 92 182902
[14] Zhang J X, Schlom D G, Chen L Q and Eom C B 2009 Appl. Phys. Lett. 95 122904
[15] Zhong W and Vanderbilt D 1995 Phys. Rev. Lett. 74 2587
[16] Scott J F 2010 Chem. Phys. Chem. 11 341
[17] Ban Z -G and Alpay S P 2002 J. Appl. Phys. 91 9288
[18] Alpay S P, Misirlioglu I B, Sharma A and Ban Z -G 2004 J. Appl. Phys. 95 8118
[19] Choi K J, Biegalski M, Li Y L, Sharan A, Schubert J, Uecker R, Reiche P, Chen Y B, Pan X Q, Gopalan V, Chen L -Q, Schlom D G and Eom C B 2004 Science 306 1005
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|