Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

doi:10.1088/0256-307X/28/5/058101

Chin. Phys. Lett.

2011, Vol. 28

Issue (5): 058101 DOI: 10.1088/0256-307X/28/5/058101

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY

Measurement of Beta Particles Induced Electron-Hole Pairs Recombination in Depletion Region of GaAs PN Junction

CHEN Hai-Yang, JIANG Lan^**, LI Da-Rang

School of Mechanical Engineering, Beijing Institute of Technology, Beijing 100081

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CHEN Hai-Yang, JIANG Lan, LI Da-Rang 2011 Chin. Phys. Lett. 28 058101

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Abstract PN junctions and schottky diodes are widely employed as electron-hole pair collectors in electron beam induced current (EBIC) techniques and betavoltaic batteries, in which the recombination in depletion regions is ignored. We measured the beta particles induced electron-hole pairs recombination in the depletion region of a GaAs P⁺PN⁺ junction, based on comparisons between measured short currents and ideal values. The results show that only 20% electron-hole pairs in the depletion can be collected, causing the short current. This indicates an electron-hole pair diffusion length of 0.2 µm in the depletion region. Hence, it is necessary to evaluate the recombination in the EBIC techniques and betavoltaic design.

Keywords: 81.05.Ea 07.10.Cm

Received: 17 January 2011 Published: 26 April 2011

PACS:	81.05.Ea	(III-V semiconductors)
	07.10.Cm	(Micromechanical devices and systems)

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https://cpl.iphy.ac.cn/10.1088/0256-307X/28/5/058101 OR https://cpl.iphy.ac.cn/Y2011/V28/I5/058101

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	CHEN Hai-Yang
	JIANG Lan
	LI Da-Rang

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