| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
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Photocatalysis of InGaN Nanodots Responsive to Visible Light |
| WANG Lai**, ZHAO Wei, HAO Zhi-Biao, LUO Yi
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Tsinghua National Laboratory for Information Science and Technology/State Key Laboratory on Integrated Optoelectronics, Department of Electronic Engineering, Tsinghua University, Beijing 100084
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| Cite this article: |
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WANG Lai, ZHAO Wei, HAO Zhi-Biao et al 2011 Chin. Phys. Lett. 28 057301 |
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Abstract Photocatalysis of InGaN nanodots grown on GaN/sapphire templates by metal organic vapor phase epitaxy is studied. Photodegradation of methylene orange by InGaN nanodots responsive to visible light is observed. Analysis through atomic force microscopy and time-resolved photoluminescence measurements show that wider bandgap of InGaN, larger specific surface area and more proportion of photocarriers diffusing to the surface before recombination are propitious to photodegradation.
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| Keywords:
73.63.Kv
78.47.Jd
78.55.Cr
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Received: 30 September 2010
Published: 26 April 2011
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