| CONDENSED MATTER: ELECTRONIC STRUCTURE, ELECTRICAL, MAGNETIC, AND OPTICAL PROPERTIES |
|
|
|
|
Improved AlGaN/GaN HEMTs Grown on Si Substrates Using Stacked AlGaN/AlN Interlayer by MOCVD |
| WANG Yong1,2**, YU Nai-Sen2, LI Ming2, LAU Kei-May2
|
1National Key Lab on High Power Semiconductor Lasers, Changchun University of Science and Technology, Changchun 130022
2Photonics Technology Center, Department of Electronic and Computer Engineering, Hong Kong University of Science and Technology, Clear Water Bay, Kowloon, Hong Kong
|
|
| Cite this article: |
|
WANG Yong, YU Nai-Sen, LI Ming et al 2011 Chin. Phys. Lett. 28 057102 |
|
|
|
|
Abstract AlGaN/GaN high electron mobility transistors (HEMTs) are grown on 2-inch Si (111) substrates by MOCVD. The stacked AlGaN/AlN interlayer with different AlGaN thickness and indium surfactant doped is designed and optimized to relieve the tensile stress during GaN epitaxial growth. The top 1.0 µm GaN buffer layer grown on the optimized AlGaN/AlN interlayer shows a crack-free and shining surface. The XRD results show that GaN(002) FWHM is 480 arcsec and GaN(102) FWHM is 900 arcsec. The AGaN/GaN HEMTs with optimized and non-optimized AlGaN/AlN interlayer are grown and processed for comparison and the dc and rf characteristics are characterized. For the dc characteristics of the device with optimized AlGaN/AlN interlayer, maximum drain current density Idss of 737 mA/mm, peak transconductance Gm of 185 mS/mm, drain leakage current density Ids of 1.7 µA/mm, gate leakage current density Igs of 24.8 µA/mm and off−state breakdown voltage VBR of 67 V are achieved with Lg/Wg/Lgs/Lgd = 1/10/1/1 µm. For the small signal rf characteristics of the device with optimized AlGaN/AlN interlayer, current gain cutoff frequency fT of 8.3 GHz and power gain cutoff frequency fmax of 19.9 GHz are achieved with Lg/Wg/Lgs/Lgd=1/100/1/1 µm. Furthermore, the best rf performance with fT of 14.5 GHz and fmax of 37.3 GHz is achieved with a reduced gate length of 0.7 µm.
|
| Keywords:
71.55.Eq
71.55.Ak
73.40.Kp
|
|
|
Received: 27 May 2010
Published: 26 April 2011
|
|
| PACS: |
71.55.Eq
|
(III-V semiconductors)
|
| |
71.55.Ak
|
(Metals, semimetals, and alloys)
|
| |
73.40.Kp
|
(III-V semiconductor-to-semiconductor contacts, p-n junctions, and heterojunctions)
|
|
|
|
|
|
[1] Yagi S, Shimizu M, Inada M, Yamamoto Y, Piao G, Okumura H, Yano Y, Akutsu N and Ohashi H 2006 Solid-State Electron. 50 1057
[2] Ikeda N, Li J, Kato K, Kaya S, Kazama T, Kokawa T, Sato Y, Iwami M, Nomura T, Masuda M and Kato S 2008 Furukawa Rev. 34 17
[3] Shen L, Coffie R, Buttari D, Heikman S, Chakraborty A, Chini A, Keller S, DenBaars S P and Mishra U K 2004 IEEE Electron Device Lett. 25 7
[4] Boutros K, Regan M, Rowell P, Gotthold D, Birkhahn R and Brar B 2003 IEEE Int. Electron Devices Meeting 1251
[5] Joshin K, Kikkawa T, Yayashi H, Maniwa T, Yokokawa S, Yokoyama M, Adachi N and Takikawa M A 2003 IEEE Int. Electron Devices Meeting 1261
[6] Ambacher O, Foutz B, Smart J, Shealy J R, Weimann N G, Chu K, Murphy M, Sierakowski A J, Schaff W J, Eastman L F, Dimitrov R, Mitchel A and Stutzmann M 2000 J. Appl. Phys. 87 334
[7] Umeno M, Egawa T and Ishikawa H 2001 Mater. Sci. Semiconduct. Processing 4 459
[8] Wu K T, Chang P H, Lien S T and Chen N C 2006 Physica E: Low-dimensional Systems and Nanostructures 32 566
[9] Weng X, Raghavan S, Acord J D, Jain A, Dickey E C and Redwing J M 2007 J. Cryst. Growth 300 217
[10] Dadgar A, Veit P, Schulze F and Blasing J 2007 Thin Solid Films 515 4356
[11] Liu Z, Wang X L, Hu G X, Guo L C, Li J P, Li J M and Zeng Y P 2007 J. Cryst. Growth 298 281
[12] Raghavan S, Weng X J, Dickey E and Redwing J M 2005 Appl. Phys. Lett. 87 142101
[13] Reiher A, Blasing J, Dadgar A, Diez A and Krost A 2003 J. Cryst. Growth 248 563
[14] Dadgar A, Blasing J, Diez A, Alam A, Heuken M, Krost A 2000 Jpn. J. Appl. Phys. 39 L1183
[15] Wang H, Liang H, Wang Y, NG K W, Deng D M and Lau K M 2010 Chin. Phys. Lett. 27 038103
[16] Wang M J and Chen K J 2008 IEEE Int. Electron Devices Meeting (IEDM)
[17] Liu J, Zhou Y G, Zhu J, Cai Y, Lau K M and Chen K J 2007 IEEE Trans. Electron Devices 54 2
[18] Feng Z H, Cai S J, Chen K J and Lau K M 2005 IEEE Electron Device Lett. 26 870
[19] Luo W J, Wang X L, Xiao H L, Wang C M, Ran J X, Guo L C, Li J P, Liu H X, Chen Y L, Yang F H and Li J M 2008 Microelectron. J. 39 1108
|
|
Viewed |
|
|
|
Full text
|
|
|
|
|
Abstract
|
|
|
|
|
